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TZMB3V0

Description
silicon epitaxial planar Z-diodes
File Size80KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

TZMB3V0 Overview

silicon epitaxial planar Z-diodes

TZMB...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Available with tighter tolerances
Very high stability
Low noise
V
Z
–tolerance
±
2%
94 9371
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85610
Rev. 3, 01-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
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