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HSMS-8202-TR1

Description
SILICON, X-KU BAND, MIXER DIODE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size178KB,6 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Download Datasheet Parametric View All

HSMS-8202-TR1 Overview

SILICON, X-KU BAND, MIXER DIODE, PLASTIC PACKAGE-3

HSMS-8202-TR1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerAVAGO
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.26 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND TO KU BAND
maximum impedance150 Ω
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating frequency14 GHz
Minimum operating frequency10 GHz
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
HSMS-8101, 8202, 8207, 8209
Data Sheet
Surface Mount Microwave Schottky Mixer Diodes
Description/Applications
These low cost microwave Schottky diodes are specifically
designed for use at X/Ku‑bands and are ideal for DBS and
VSAT downconverter applications. They are available in
SOT‑23 and SOT‑143 standard package configurations.
Note that Avago's manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of
match.
Features
Optimized for use at 10‑14 GHz
Low Capacitance
Low Conversion Loss
Low RD
Low Cost Surface Mount Plastic Package
Lead‑free
Plastic SOT-23 Package
Package Lead Code Identification
(Top View)
SINGLE
3
SERIES
3
1
Plastic SOT-143 Package
3
#1
RING
QUAD
2
1
#2
2
4
CROSS-OVER
QUAD
3
4
1
#7
2
1
#9
2
Absolute Maximum Ratings
[1]
, T
A
= +25°C
Symbol
P
T
P
IV
T
J
T
STG
, T
op
Parameter
Total Device Dissipation
[2]
Peak Inverse Voltage
Junction Temperature
Storage and Operating
Temperature
Unit
mW
V
°C
°C
Min.
‑65
Max.
75
4
+150
+150
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Measured in an infinite heat sink at T
CASE
= 25°C. Derate linearly to
zero at 150°C per diode.
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