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U2GC44

Description
1.3 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size117KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

U2GC44 Overview

1.3 A, 400 V, SILICON, RECTIFIER DIODE

U2GC44 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak forward current88 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
U2BC44,U2GC44,U2JC44
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
U2BC44,U2GC44,U2JC44
GENERAL PURPOSE RECTIFIER APPLICATIONS
l
Repetitive Peak Reverse Voltage
l
Average Forward Current
l
Mini Plastic Mold Package
: V
RRM
= 100, 400, 600 V
: I
F (AV)
= 2.0 A
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
U2BC44
Repetitive Peak
Reverse Voltage
U2GC44
U2JC44
Average
Forward
Current
On Ceramic Substrate
On Glass−epoxy
Substrate
I
F (AV)
V
RRM
SYMBOL
RATING
100
400
600
2.0
(Ta = 45°C)
1.3
(Ta = 25°C)
80 (50Hz)
88 (60Hz)
−40~150
−40~150
V
UNIT
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temparature Range
Storage Temparature Range
I
FSM
T
j
T
stg
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.1g
3−5F1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Thermal Resistance
SYMBOL
V
FM
I
RRM
R
th (j−a)
TEST CONDITION
I
FM
= 2.0 A
V
RRM
= Rated
DC
On ceramic substrate
On glass−epoxy substrate
MIN
TYP.
MAX
1.2
10
50
110
UNIT
V
µA
°C / W
STANDARD SOLDERING PAD
MARKING
CODE
2BC
2GC
2JC
TYPE
U2BC44
U2GC44
U2JC44
1
2001-07-11

U2GC44 Related Products

U2GC44 U2BC44 U2JC44
Description 1.3 A, 400 V, SILICON, RECTIFIER DIODE 1.3 A, 100 V, SILICON, RECTIFIER DIODE 1.3 A, 600 V, SILICON, RECTIFIER DIODE
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Contacts 2 2 2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 88 A 88 A 88 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 1.3 A 1.3 A 1.3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 100 V 600 V
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD
Terminal form C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL
Base Number Matches 1 1 1
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