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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK230
RF AMP. FOR VHF/CATV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
•
The Characteristic of Cross-Modulation is good.
CM = 108 dB
µ
(TYP.) @f = 470 MHz, G
R
=
−30
dB
Low Noise Figure
High Power Gain
Enhancement Typ.
Suitable for use as RF amplifier in CATV tuner.
Automatically Mounting: Embossed Type Taping
Small Package: 4 Pins Mini Mold Package. (SC-61)
NF1 = 2.2 dB TYP. (@ = 470 MHz)
NF2 = 0.9 dB TYP. (@ = 55 MHz)
G
PS
= 19.5 dB TYP. (@ = 470 MHz)
•
•
•
•
•
•
0.6
–0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
V
DSX
V
G1S
V
G2S
V
G1D
I
D
18
±8(±10)*
±8(±10)*
18
18
1
1
5
5
d
V
1.1
+0.2
–3.1
V
V
co
nt
in
ue
0.8
0.4
–0.05
+0.1
+0.1
V
G2D
V
25
mA
°C
°C
5
0 to 0.1
V
5
Total Power Dissipation
Channel Temperature
Storage Temperature
R
L
≥
10 kΩ
P
D
200
125
mW
T
ch
T
stg
−55
to +125
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltages or fields.
Document No. PU10029EJ01V0DS (1st edition)
(Previous No. P10587EJ3V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
D
is
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2001
NEC Corporation 1993
0.16
+0.1
–0.06
Pr
od
uc
t
PACKAGE DIMENSIONS
(Unit: mm)
0.4
–0.05
1.5
+0.2
–0.1
2
2.9±0.2
(1.8)
0.95
3
4
0.85
1
(1.9)
0.4
–0.05
2.8
–0.3
+0.2
+0.1
+0.1
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