BUZ326 datasheet, PDF - EEWORLD Datasheet

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BUZ326: DescriptionPower Field-Effect Transistor, 10.5A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218; CategoryDiscrete semiconductor The transistor; File Size220KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ326 Overview

Power Field-Effect Transistor, 10.5A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

BUZ326 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	570 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (Abs) (ID)	10.5 A
Maximum drain current (ID)	10.5 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	42 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUZ 326

SIPMOS

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

BUZ 326

400 V

10.5 A

DS(on)

0.5

Ω

Package

TO-218 AA

Ordering Code

C67078-S3112-A2

Maximum Ratings

Parameter

Continuous drain current

Symbol

Values

10.5

Unit

Dpuls

= 27 °C

Pulsed drain current

= 25 °C

Avalanche current,limited by

jmax

Avalanche energy,periodic limited by

jmax

Avalanche energy, single pulse

10.5

= 10.5 A,

= 50 V,

= 25

Ω

= 9.05 mH,

= 25 °C

Gate source voltage

Power dissipation

570

tot

125

= 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Semiconductor Group

stg

thJC

thJA

-55 ... + 150

≤

55 / 150 / 56

°C

K/W

07/96

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