EMB2 / UMB2N / IMB2A
Transistors
General purpose
(dual digital transistors)
EMB2 / UMB2N / IMB2A
Features
1) Two DTA144E chips in a EMT or UMT or SMT
package.
2) Same size as EMT3 or UMT3 or SMT3 package, so
same mounting machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
External dimensions
(Units : mm)
EMB2
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B2
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
UMB2N
(4)
0.65
(3)
0.5
0.5 0.5
1.0
1.6
0.2
(6)
1.25
0.15
The following characteristics apply to both DTr
1
and
DTr
2
.
2.1
0.1Min.
0to0.1
Equivalent circuit
EMB2 / UMB2N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=47kΩ
R
2
=47kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
IMB2A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=47kΩ
R
2
=47kΩ
(1)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : B2
IMB2A
(6)
0.3
(4)
(5)
(6)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
−50
−40
10
Output current
EMB2, UMB2N
Power
dissipation IMB2A
Junction temperature
Storage temperature
−30
−100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
0.3to0.6
0to0.1
(3)
(2)
(1)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B2
mA
mW
∗
1
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(1)
Each lead has same dimensions
Each lead has same dimensions
2.0
(5)
(2)
EMB2 / UMB2N / IMB2A
Transistors
Electrical characteristics
(Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/ R
1
Min.
−
−3
−
−
−
68
−
32.9
0.8
Typ.
−
−
−0.1
−
−
−
250
47
1
Max.
−0.5
−
−0.3
−0.18
−0.5
−
−
61.1
1.2
Unit
V
V
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−2mA
I
O
/I
I
=
−10mA/−0.5mA
V
I
=
−5V
V
CC
=
−50V,
V
I
=0V
V
O
=
−5V,
I
O
=
−5mA
V
CE
=
−10mA,
I
E
=5mA,
f=100MH
Z
∗
−
−
∗
Transition frequency of the device
Packaging specifications
Package
Code
Type
EMB2
UMB2N
IMB2A
Basic ordering
unit (pieces)
T2R
8000
Taping
TR
3000
T148
3000
Electrical characteristic curves
−100
−50
V
O
=−0.3V
OUTPUT CURRENT : Io
(A)
−10m
−5m
−2m
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
V
CC
=−5V
Ta=100˚C
25˚C
−40˚C
1k
500
V
O
=−5V
Ta=100˚C
25˚C
−40˚C
INPUT VOLTAGE : V
I (on)
(V)
DC CURRENT GAIN : G
I
−20
−10
−5
−2
−1
200
100
50
20
10
5
2
1
Ta=−40˚C
25˚C
100˚C
−500m
−200m
−100m
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m −100m
−1µ
0
−0.5
−1
−1.5
−2
−2.5
−3
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−1
−500m
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
l
O
/l
I
=20
Ta=100˚C
25˚C
−40˚C
OUTPUT VOLTAGE : V
O (on)
(V)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
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