LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
Description
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting
diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
6
MCT5201
MCT5210
MCT5211
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering
250% CTR
CE(SAT)
with 1 mA of LED input current. When an LED input
current of 1.6 mA is supplied data rates to 20K bits/s are possible.
The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an
external base to emitter resistor data rates of 100K bits/s can be achieved.
6
6
1
1
Features
1
•
•
•
•
•
•
High CTR
CE(SAT)
comparable to Darlingtons
CTR guaranteed 0°C to 70°C
High common mode transient rejection 5kV/µs
Data rates up to 150 kbits/s (NRZ)
Underwriters Laboratory (UL) recognized (file #E90700)
VDE recognized (file #94766)
– Add option 300 (e.g., MCT5211.300)
SCHEMATIC
ANODE 1
6 BASE
Applications
•
•
•
•
•
•
CMOS to CMOS/LSTTL logic isolation
LSTTL to CMOS/LSTTL logic isolation
RS-232 line receiver
Telephone ring detector
AC line voltage sensing
Switching power supply
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Reverse Input Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
Continuous Collector Current
Detector Power Dissipation
Derate Linearly from 25°C
© 2003 Fairchild Semiconductor Corporation
CATHODE 2
5 COL
3
4 EMITTER
Symbol
Device
Value
Units
T
STG
T
OPR
T
SOL
P
D
All
All
All
All
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
150
150
2.0
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
mW
mW/°C
I
F
V
R
I
F
(pk)
P
D
All
All
All
All
All
All
All
All
I
C
P
D
Page 1 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Voltage
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
(I
C
= 1.0 mA, I
F
= 0)
(I
C
= 10 µA, I
F
= 0)
(I
C
= 10 µA, I
F
= 0)
(V
CE
= 10V, I
F
= 0, R
BE
= 1M
Ω
)
(V
CE
= 0, f = 1 MHz)
(V
CB
= 0, f = 1 MHz)
(V
EB
= 0, f = 1 MHz)
BV
CEO
BV
CBO
BV
EBO
I
CER
C
CE
C
CB
C
EB
All
All
All
All
All
All
All
30
30
5
100
120
10
1
10
80
15
100
V
V
V
nA
pF
pF
pF
(I
F
= 5 mA)
(I
F
= 2 mA)
(I
R
= 10 µA)
(V
F
= 0 V, f = 1.0 MHz)
V
F
∆
V
F
∆
T
A
V
R
C
J
All
All
All
All
6
18
1.25
-1.75
1.5
V
mV/
°C
V
pF
Test Conditions
Symbol
Device
Min
Typ**
Max
Units
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation
Voltage
(10)
Isolation Resistance
(10)
Isolation Capacitance
(9)
Common Mode Transient
Rejection – Output High
Common Mode Transient
Rejection – Output Low
**All typical T
A
=25°C
Test Conditions
(f = 60Hz, t = 1 min.)
V
I-O
= 500 VDC, T
A
= 25°C
V
I-O
= 0, f = 1 MHz
V
CM
= 50 V
P-P1
, R
L
= 750
Ω
, I
F
= 0
V
CM
= 50 V
P-P
, R
L
= 1K
Ω
, I
F
= 0
V
CM
= 50 V
P-P1
, R
L
= 750
Ω
, I
F
=1.6mA
V
CM
= 50 V
P-P1
, R
L
= 1K
Ω
, I
F
= 5 mA
Symbol
V
ISO
R
ISO
C
ISO
CM
H
CM
L
Device
All
All
All
MCT5210/11
MCT5200/01
MCT5210/11
MCT5200/01
Min
5300
10
11
0.7
5000
5000
Typ** Max
Units
Vac(rms)
Ω
pF
V/µs
V/µs
© 2003 Fairchild Semiconductor Corporation
Page 2 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TRANSFER CHARACTERISTICS
(T
A
= 0°C to 70°C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
MCT5200
MCT5201
MCT5210
MCT5211
MCT5210
CTR
(CE)
MCT5211
MCT5200
MCT5201
MCT5210
MCT5211
MCT5200
MCT5201
MCT5210
MCT5211
Device
MCT5210
Min
Typ
10
7
14
15
17
24
1.6
3
0.4
8
2.5
11
7
16
18
12
0.5
1.1
1.3
2.5
Min
75
120
60
100
75
70
150
110
0.2
0.28
0.2
0.3
0.25
0.4
0.4
0.4
0.4
Max
Typ**
Max
Units
I
F
= 10 mA, V
CE
= 0.4 V
I
F
= 5 mA, V
CE
= 0.4 V
Saturated Current
(1)
I
F
= 3.0 mA, V
CE
= 0.4 V
Transfer Ratio
(Collector to Emitter)
I
F
= 1.6 mA, V
CE
= 0.4 V
I
F
= 1.0 mA, V
CE
= 0.4 V
I
F
= 3.0 mA, V
CE
= 5.0 V
Current Transfer Ratio
I = 1.6 mA, V
CE
= 5.0 V
(Collector to Emitter)
(1) F
I
F
= 1.0 mA, V
CE
= 5.0 V
I
F
= 10 mA, V
CB
= 4.3 V
I
F
= 5 mA, V
CB
= 4.3 V
Current Transfer Ratio
I
F
= 3.0 mA, V
CE
= 4.3 V
Collector to Base(2)
I
F
= 1.6 mA, V
CE
= 4.3 V
I
F
= 1.0 mA, V
CE
= 4.3 V
I
F
= 10 mA, I
CE
= 7.5 mA
I
F
= 5 mA, I
CE
= 6 mA
Saturation Voltage
I
F
= 3.0 mA, I
CE
= 1.8 mA
I
F
= 1.6 mA, I
CE
= 1.6 mA
AC Characteristics
Test Conditions
R
L
= 330
Ω,
R
BE
=
∞
R
L
= 3.3 kΩ, R
BE
= 39 kΩ
R
L
= 750
Ω,
R
BE
=
∞
R
L
= 4.7 kΩ, R
BE
= 91 kΩ
R
L
= 1.5 kΩ, R
BE
=
∞
R
L
= 10 kΩ, R
BE
= 160 kΩ
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330 kΩ
R
L
= 330
Ω,
R
BE
=
∞
R
L
= 3.3 kΩ, R
BE
= 39 kΩ
R
L
= 750
Ω,
R
BE
=
∞
R
L
= 4.7 kΩ, R
BE
= 91 kΩ
R
L
= 1.5 kΩ, R
BE
=
∞
R
L
= 10 kΩ, R
BE
= 160 kΩ
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330 kΩ
Delay Time
(5)
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 3.0 mA
V
CC
= 5.0 V
I
F
= 1.6mA
V
CC
= 5.0V
I
F
= 1.0mA
V
CC
= 5.0V
I
F
= 10mA
I
F
= 5mA
I
F
= 3.0 mA
V
CC
= 5.0 V
I
F
= 1.6mA
V
CC
= 5.0V
I
F
= 1.0mA
V
CC
= 5.0 V
I
F
= 10mA
I
F
= 5mA
I
F
= 10mA
I
F
= 5mA
I
F
= 10mA
I
F
= 5mA
t
r
CTR
CE(SAT)
%
%
CTR
(CB)
%
V
CE(SAT)
V
Symbol
Units
Propagation Delay
High to Low
(3)
T
PHL
MCT5211
µs
MCT5200
MCT5201
MCT5210
12
30
Propagation Delay
Low to High
(4)
T
PLH
MCT5211
µs
MCT5200
MCT5201
MCT5200
t
d
MCT5201
MCT5200
MCT5201
20
13
7
15
6
20
µs
µs
Rise Time
(6)
© 2003 Fairchild Semiconductor Corporation
Page 3 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TRANSFER CHARACTERISTICS
(T
A
= 0°C to 70°C Unless otherwise specified.) (Continued)
DC Characteristics
Storage Time
(7)
Test Conditions
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 10mA
I
F
= 5mA
I
F
= 10mA
I
F
= 5mA
t
f
t
s
Symbol
Device
MCT5200
MCT5201
MCT5200
MCT5201
Min
Typ**
15
10
16
16
Max
18
13
30
30
µs
µs
Units
Fall Time
(8)
**All typicals at T
A
= 25°C
Notes
1. DC Current Transfer Ratio (CTR
CE
) is defined as the transistor collector current (I
CE
) divided by the input LED current (I
F
) x
100%, at a specified voltage between the collector and emitter (V
CE
).
2. The collector base Current Transfer Ratio (CTR
CB
) is defined as the transistor collector base photocurrent(I
CB
) divided by the
input LED current (I
F
) time 100%.
3. Referring to Figure 14 the T
PHL
propagation delay is measured from the 50% point of the rising edge of the data input pulse to
the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the T
PLH
propagation delay is measured from the 50% point of the falling edge of data input pulse to the
1.3V point on the rising edge of the output pulse.
5. Delay time (t
d
) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (t
r
) is measured from 90% to 10% of Vo falling edge.
7. Storage time (t
s
) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (t
f
) is measured from 10% to 90% of Vo rising edge.
9. C
ISO
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
© 2003 Fairchild Semiconductor Corporation
Page 4 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TYPICAL PERFORMANCE GRAPHS
Fig. 1 LED Forward Voltage vs. Forward Current
2.0
V
F
- FORWARD VOLTAGE (V)
1.8
1.6
1.4
T
A
= -55°C
1.2
1.0
NORMALIZED CTR
CE
0.8
0.6
0.4
0.2
Fig. 2 Normalized Current Transfer Ratio vs.
Forward Current
1.2
1.0
0.8
0.1
T
A
= 25°C
T
A
= 100°C
Normalized to:
I
F
= 5mA
V
CE
= 5V
T
A
= 25°C
1
10
I
F
- LED FORWARD CURRENT (mA)
100
0
0.1
1
10
I
F
- FORWARD CURRENT (mA)
100
Fig. 3 Normalized CTR vs. Temperature
1.6
1.4
NORMALIZED CTR
CE
1.2
1.0
0.8
I
F
= 1mA
Normalized to:
I
F
= 5mA
V
CE
= 5V
T
A
= 25°C
Fig. 4 Normalized Collector vs.
Collector - Emitter Voltage
10
NORMALIZED I
CE
- COLLECTOR
- EMITTER CURRENT
I
F
= 10 mA
I
F
= 10mA
I
F
= 2mA
I
F
= 5mA
1
I
F
= 2 mA
I
F
= 5 mA
I
F
= 1 mA
I
F
= 0.5 mA
0.1
0.01
0.001
0.6
0.4
0.2
0.0
-60
-40
I
F
= 0.5 mA
I
F
= 0.2 mA
I
F
= 0.2 mA
-20
0
20
40
60
80
100
0.0001
0.1
Normalized to:
I
F
= 5mA
:
V
CE
= 5V
T
A
= 25°C
1
V
CE
- COLLECTOR - EMITTER VOLTAGE - V
10
T
A
- AMBIENT TEMPERATURE - °C
Fig. 5 Normalized Collector Base Photocurrent
Ratio vs. Forward Current
100
NORMALIZED ICB - COLLECTOR
BASE PHOTO CURRENT
NORMALIZED - COLLECTOR
BASE CURRENT
10
Fig. 6 Normalized Collector -
Base Current vs. Temperature
I
F
= 10 mA
10
1
I
F
= 5 mA
I
F
= 2 mA
1
0.1
I
F
= 1 mA
I
F
= 0.5 mA
0.1
Normalized to:
I
F
= 5mA
V
CB
= 4.3V
T
A
= 25°C
0.01
Normalized to:
I
F
= 5mA
V
CB
= 4.3V
T
A
= 25°C
I
F
= 0.2 mA
0.01
0.1
1
10
100
0.001
-60
-40
-20
0
20
40
60
80
100
I
F
- FORWARD CURRENT - mA
T
A
- AMBIENT TEMPERATURE - °C
© 2003 Fairchild Semiconductor Corporation
Page 5 of 11
6/10/03
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