LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
•
Features
1) Built-in bias resistors enable the configuration of an inverter cir-
cuit without connecting external input resistors (see equivalent
circuit).
2) The bias resistors consist of thinfilm resistors with complete
isolation to allow positive biasing of the input. They also have the
advantage of almost completely eliminat-ing parasitic effects.
3) Only the on/off conditions need to be set for operation, making
device design easy.
• Structure
PNP digital transistor ( Built-in resistors)
•
Equivalent circuit
(1)
2.9 + 0.2
1.9+ 0.2
0.95+0.95
(2)
2.8+ 0.2
+ 0.2
- 0.1
DTA114EKA
1.1
-
+ 0.2
0.1
0.8 + 0.1
0 ~ 0.1
IN
GND(+)
IN
OUT
GND(+)
0.4
+ 0.1
- 0.05
0.15
+ 0.1
- 0.06
All terminals have same dimensions
EIAJ: SC— 59
•
Absolute maximum ratings(T
a
=25 °C)
Parameter
symbol
V
V
cc
IN
limits
–50
–40~+10
–50
–100
200
150
–55~+150
unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
I
O
I
C(Max.)
P
d
T
j
T
stg
•
Elecrical characteristics(T =25°C)
a
Parameter
Input voltage
Output Voltage
Input current
Output current
symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
Min.
—
–3
—
—
—
30
7
0.8
—
Typ.
—
—
—
—
—
—
10
1
250
Max.
–0.5
—
–0.3
–0.88
–0.5
—
13
1.2
—
Unit
V
V
mA
Conditions
V
CC
= – 5V,I
O
= –100
µ
A
V
O
= – 0.3V,I
O
= –10 mA
I
O
/ I
I
= –10mA / –0.5mA
V
I
= – 5V
V
CC
µ
A
—
KΩ
—
MHz
= – 50 V,V
I
= 0 V
DC current gain
G
I
Input resistance
R
1
Resistance ratio
R
2
/ R
1
Transition frequency
f
T
*Transition frequency of the device
V
O
= – 5V,I
O
= –5mA
—
—
V
CE
= –10V, I
E
= 5 mA,f =100MHz*
0.3 ~ 0.6
R2
(3)
(1) GND
(2) IN
(3) OUT
1.6
R1
OUT
P3–1/2
LESHAN RADIO COMPANY, LTD.
DTA114EKA
ELECTRICAL CHARACTERISTIC CURVES
-100
-50
V
O
= – 0.3V
-10m
-5m
V
T
A
= 100°C
25°C
–40°C
CC
=–5V
INPUT VOLTAGE: V
I(on)
( V )
-20
-10
-5
-2
OUTPUT CURRENT: I
O
( A )
-2m
-5m
-10m -20m
-50m -100m
-2m
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
T
A
= –40°C
25°C
100°C
-1
-0.5
-0.2
-0.1
-100µ-200µ
-500µ
-1m
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
OUTPUT CURRENT: I
O
(A)
INPUT VOLTAGE: V
I(ON)
(V)
Figure 1. Input voltage vs.output current
(ON characteristics)
Figure 2. Output current vs.input voltage
(OFF characteristics)
-1
1K
V
O
= – 5 V
500
200
-0.5
I
O
/ I
I
= 20
T
A
= 100°C
25°C
–40°C
OUTPUT VOLTAGE: V
O(on)
( V )
DC CURRENT GAIN: G
I
T
A
= 100°C
25°C
–40°C
-0.2
100
50
20
-0.1
-0.05
-0.02
10
5
2
1
-100µ-200µ
-500µ
-1m
-2m
-5m
-10m -20m
-50m -100m
-0.01
-.005
-.002
-.001
-100µ-200µ
-500µ -1m
-2m
-5m
-10m -20m
-50m -100m
OUTPUT CURRENT: I
O
(A)
OUTPUT CURRENT: I
O
(A)
Figure 3. DC current gain vs.output current
Figure 4. Output voltage vs.output current
P3–2/2
stm32/stm8
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