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TC55V16100FTI-12

Description
MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS
Categorystorage    storage   
File Size415KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC55V16100FTI-12 Overview

MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS

TC55V16100FTI-12 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts54
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time12 ns
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density16777216 bi
Memory IC TypeCACHE SRAM
memory width16
Number of functions1
Number of terminals54
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm

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