FDZ8040L — Integrated Load Switch
April 2013
FDZ8040L
Integrated Load Switch
Features
Optimized for Low-Voltage Core ICs in
Portable Systems
Very Small Package Dimension: WLCSP
0.8 X 0.8 X 0.5 mm
3
Current = 1.2 A, V
IN
Max. = 4 V
Current = 2 A, V
IN
Max. = 4 V (Pulsed)
R
DS(on)
= 80 mΩ at V
ON
= V
IN
= 4 V
R
DS(on)
= 85 mΩ at V
ON
= V
IN
= 3.6 V
R
DS(on)
= 90 mΩ at V
ON
= V
IN
= 3 V
R
DS(on)
= 360 mΩ at V
ON
= V
IN
= 0.9 V
R
DS(on)
= 1000 mΩ at V
ON
= V
IN
= 0.8 V
RoHS Compliant
Description
This device is particularly suited for compact power
management in portable applications needing 0.8 V to
4 V input and 1.2 A output current capability. This load
switch integrated a level-shifting function that drives a P-
channel power MOSFET in a very small 0.8 X 0.8 X
0.5 mm
3
WLCSP package.
Applications
Load Switch
Power Management in Portable Applications
GND
ON
VOUT
VIN
Pin 1
Figure 1.
Bottom View
Figure 2.
Top View
Ordering Information
Part
Number
FDZ8040L
Device
Mark
ZM
Ball
Pitch
0.4 mm
Operating
Temperature Range
-40 to 85°C
Switch
Package
Packing
Method
Tape & Reel
0.8 x 0.8 x
80 m, P-Channel
0.5 mm
3
WLCSP
MOSFET
© 2011 Fairchild Semiconductor Corporation
FDZ8040L • Rev. C1
www.fairchildsemi.com
FDZ8040L — Integrated Load Switch
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
V
IN
I
OUT_C
I
OUT_P
P
D
T
A
T
STG
R
Θ
JA
Parameter
Voltage on VIN, VOUT, ON to GND
I
OUT
-Load Current (Continuous)
(1a)
I
OUT
-Load Current (Pulsed)
Power Dissipation at T
A
= 25°C
(1a)
Operating Temperature Range
Storage Temperature
Thermal Resistance, Junction to Ambient
(1a)
Electrostatic Discharge Capability
Human Body Model, JESD22-A114
Charged Device Model, JESD22-C101
Min.
-0.3
Max.
4.2
1.2
2
0.9
Unit
V
A
A
W
°C
°C
°C/W
kV
-40
-65
8
2
85
150
135
ESD
Notes:
1. RΘ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RΘ
JC
is guaranteed by design, while RΘ
JA
is determined by the board design.
a.
2.
135°C/W when mounted on a
1-inch square pad of 2-oz copper.
b.
360°C/W when mounted on a
minimum pad of 2-oz copper.
Pulse test: pulse width < 300 µs; duty cycle < 2.0%.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
V
IN
V
ON
T
A
Voltage on VIN Pin
Voltage on ON Pin
Operating Temperature
Range
Parameter
Min.
0.8
0.7
Max.
4.0
4.0
85
Unit
V
V
°C
1 V to 4 V
0.8 V to 4 V
-40
-10
© 2011 Fairchild Semiconductor Corporation
FDZ8040L • Rev. C6
www.fairchildsemi.com
3
FDZ8040L — Integrated Load Switch
Electrical Characteristics
T
J
= 25°C and V
IN
=1.8 V, unless otherwise noted.
Symbol
V
IN
V
IL
V
IH
I
Q
I
Q(off)
I
SD(off)
I
ON
R
PD
Parameter
Operation Voltage
ON Input Logic Low Voltage
ON Input Logic High Voltage
Quiescent Current
Off Supply Current
Off Switch Current
ON Input Leakage
Output Discharge Pull-Down
Resistance
Test Conditions
1.6 V ≤ V
IN
≤ 4.0 V
0.8 V ≤ V
IN
≤ 1.6 V
1.6 V ≤ V
IN
≤ 4.0 V
0.8 V ≤ V
IN
≤ 1.6 V
I
OUT
= 0 mA, V
IN
= V
ON
= 1.8 V
I
OUT
= 0 mA, V
IN
= 1.8 V, V
ON
= GND
V
ON
= GND, V
OUT
= 0 V, V
IN
= 1.8 V
V
ON
= V
IN
or GND
Min. Typ.
0.8
Max.
4.0
0.35
0.25
Unit
V
V
V
1.0
0.7
2.1
1
100
1
200
μA
μA
nA
μA
Ω
V
ON
= V
IN
= 4 V, I
OUT
= 300 mA
V
ON
= V
IN
= 3.6 V, I
OUT
= 300 mA
V
ON
= V
IN
= 3 V, I
OUT
= 300 mA
V
ON
= 0.7 V, V
IN
= 1.6 V, I
OUT
= 300 mA
V
ON
= 0.7 V, V
IN
= 1 V, I
OUT
= 300 mA
R
DS(ON)
Static Drain-Source
On-Resistance
V
ON
= V
IN
= 0.9 V, I
OUT
= 10 mA
V
ON
= V
IN
= 0.8 V, I
OUT
= 10 mA
V
ON
= V
IN
= 0.9 V, I
OUT
= 10 mA,
T
J
= 10 ~ 85°C
V
ON
= V
IN
= 0.8 V, I
OUT
= 10 mA,
T
J
= 10 ~ 85°C
V
IN
= 3.6 V, I
OUT
= 300 mA, T
J
= 85°C
50
51
54
73
140
186
348
194
268
59
80
85
90
110
309
360
1000
370
750
102
mΩ
© 2011 Fairchild Semiconductor Corporation
FDZ8040L • Rev. C6
www.fairchildsemi.com
4
Test/Measurement
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