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DFD05T

Description
0.5A Power Rectifier
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DFD05T Overview

0.5A Power Rectifier

DFD05T Parametric

Parameter NameAttribute value
MakerSANYO
Reach Compliance Codeunknow
ECCN codeEAR99
Ordering number:EN2373
DFD05T
Diffused Junction Type Silicon Diode
0.5A Power Rectifier
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R, T).
· Peak reverse voltage:V
RM
=100 to 1700V
· Average rectified current I
O
=0.5A
Package Dimensions
unit:mm
1174
[DFD05T]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
DFD05TB
100
DFD05TC
200
DFD05TE
400
C:Cathode
A:Anode
DFD05TG
600
0.5
30
150
Unit
V
A
A
Ta=50˚C
50Hz sine wave, 1cycle
˚C
˚C
Unit
V
A
A
˚C
˚C
–40 to +150
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=50˚C
50Hz sine wave,
1 cycle
DFD05TJ
800
DFD05TL
1000
DFD05TN
1200
DFD05TR
1500
DFD05TT
1700
0.5
20
125
–40 to +150
Electrical Characteristics
at Ta = 25˚C
Parameter
Forward Voltage
Reverse Current
Reverse Recovery Time
Symbol
VF
IR
trr
IF=0.5A (B, C, E, G)
IF=0.5A (J, L, N, R, T)
VR:At each VRM
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L, N, R, T)
Conditions
Ratings
min
typ
max
1.2
1.5
10
0.15
0.3
Unit
V
V
µA
µs
µs
Reverse Recovery Time Test Circuit
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)1258AT, TS No.2373-1/2
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