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DL4002

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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DL4002 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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DL4001
THRU
DL4007
1 Amp Glass
Passivated Rectifier
50 to 1000 Volts
MELF
Cathode Mark
Glass Passivated Junction
Low Current Leakage
Metalurgically Bonded Construction
Surface Mount Applications
Maximum Ratings
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Maximum Thermal Resistance; 30°C/W Junction To Lead
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
DIM
A
B
C
INCHES
MIN
.185
.018
.095
MCC
Part Number
Device
Marking
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
C
DL4001
DL4002
DL4003
DL4004
DL4005
DL4006
DL4007
-------
-------
-------
-------
-------
-------
-------
B
A
DIMENSIONS
MM
MIN
4.70
0.46
2.40
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
A
= 75°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 1.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
12pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
MAX
.205
.022
.105
MAX
5.20
0.56
2.67
NOTE
Nominal
SUGGESTED SOLDER
PAD LAYOUT
.220”
.115”
.035”
www.mccsemi.com

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