DL4003 datasheet, PDF - EEWORLD Datasheet

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DL4003: Description1 A, 200 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size55KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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DL4003 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

DL4001

THRU

DL4007

1 Amp Glass

Passivated Rectifier

50 to 1000 Volts

MELF

Cathode Mark

Glass Passivated Junction

Low Current Leakage

Metalurgically Bonded Construction

Surface Mount Applications

Maximum Ratings

•

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

DIM

INCHES

MIN

.185

.018

.095

MCC

Part Number

Device

Marking

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

DL4001

DL4002

DL4003

DL4004

DL4005

DL4006

DL4007

-------

DIMENSIONS

MIN

4.70

0.46

2.40

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

1.0A

= 75°C

Current

Peak Forward Surge

FSM

30A

8.3ms, half sine

Current

Maximum

1.1V

= 1.0A;

Instantaneous

Forward Voltage

= 25°C*

Maximum DC

Reverse Current At

5.0µA

= 25°C

Rated DC Blocking

50µA

= 125°C

Voltage

Typical Junction

12pF

Measured at

Capacitance

1.0MHz, V

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

MAX

.205

.022

.105

MAX

5.20

0.56

2.67

NOTE

Nominal

∅

SUGGESTED SOLDER

PAD LAYOUT

.220”

.115”

.035”

www.mccsemi.com

DL4003 Related Products

	DL4003	DL4002	DL4004	DL4001	DL4005	DL4007	DL4006
Description	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE

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