DL4001 datasheet, PDF - EEWORLD Datasheet

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DL4001: Description1 A, 50 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size55KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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DL4001 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

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DL4001

THRU

DL4007

1 Amp Glass

Passivated Rectifier

50 to 1000 Volts

MELF

Cathode Mark

Glass Passivated Junction

Low Current Leakage

Metalurgically Bonded Construction

Surface Mount Applications

Maximum Ratings

•

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

DIM

A

B

C

INCHES

MIN

.185

.018

.095

MCC

Part Number

Device

Marking

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

C

DL4001

DL4002

DL4003

DL4004

DL4005

DL4006

DL4007

-------

B

A

DIMENSIONS

MM

MIN

4.70

0.46

2.40

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

1.0A

T

A

= 75°C

Current

Peak Forward Surge

I

FSM

30A

8.3ms, half sine

Current

Maximum

1.1V

I

FM

= 1.0A;

Instantaneous

V

F

Forward Voltage

T

J

= 25°C*

Maximum DC

Reverse Current At

I

R

5.0µA

T

J

= 25°C

Rated DC Blocking

50µA

T

J

= 125°C

Voltage

Typical Junction

C

J

12pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

MAX

.205

.022

.105

MAX

5.20

0.56

2.67

NOTE

Nominal

∅

SUGGESTED SOLDER

PAD LAYOUT

.220”

.115”

.035”

www.mccsemi.com

DL4001 Related Products

	DL4001	DL4002	DL4003	DL4004	DL4005	DL4007	DL4006
Description	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE

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