MT8VDDT3264HDY-265A1 datasheet, PDF

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MT8VDDT3264HDY-265A1: DescriptionDDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200; Categorystorage storage; File Size637KB，32 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT8VDDT3264HDY-265A1 Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200

MT8VDDT3264HDY-265A1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	MODULE
package instruction	DIMM,
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200
JESD-609 code	e4
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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128MB, 256MB, 512MB, 1GB (x64, DR)

200-PIN DDR SODIMM

DDR SDRAM SMALL-

OUTLINE DIMM

Features

• 200-pin, small-outline, dual in-line memory

module (SODIMM)

• Fast data transfer rates: PC2100 or PC2700

• Utilizes 266 MT/s and 333 MT/s DDR SDRAM

components

• 128MB (16 Meg x 64), 256MB (32 Meg x 64), 512MB

(64 Meg x 64), or 1GB (128 Meg x 64)

• V

= V

Q = +2.5V

• V

DDSPD

= +2.3V to +3.6V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

• Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

• Bidirectional data strobe (DQS) transmitted/received

with data—i.e., source-synchronous data capture

• Differential clock inputs CK and CK#

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Auto Refresh and Self Refresh Modes

• 15.6µs (128MB), 7.8125µs (256MB, 512MB, and

1GB) maximum average periodic refresh interval

• Gold edge contacts

MT8VDDT1664HD – 128MB

MT8VDDT3264HD – 256MB

MT8VDDT6464HD – 512MB

MT8VDDT12864HD – 1GB (ADVANCE

‡

)

For the latest data sheet, please refer to the Micron



Web

site:

www.micron.com/products/modules

Figure 1: 200-Pin SODIMM (MO-224)

1.25in. (31.75mm)

OPTIONS

MARKING

• Package

200-pin SODIMM (standard)

200-pin SODIMM (lead-free)

• Memory Clock, Speed, CAS Latency

6ns (166 MHz), 333 MT/s, CL = 2.5

7.5ns (133 MHz), 266 MT/s, CL = 2

7.5ns (133 MHz), 266 MT/s, CL = 2.5

• PCB

1.25in. (31.75mm)

NOTE:

2. CL = CAS (READ) Latency

-335

-262

-26A

-265

1. Contact Micron for product availability.

Table 1:

Address Table

128MB

256MB

8K (A0–A12)

4 (BA0, BA1)

256Mb (16 Meg x 16)

512 (A0–A8)

2 (S0#, S1#)

512MB

8K (A0–A12)

4 (BA0, BA1)

512Mb (32 Meg x 16)

1K (A0–A9)

2 (S0#, S1#)

1GB

16K (A0–A13)

4 (BA0, BA1)

1Gb (64 Meg x 16)

1K (A0–A9)

2 (S0#, S1#)

4K (A0–A11)

4 (BA0, BA1)

128Mb (8 Meg x 16)

512 (A0–A8)

2 (S0#, S1#)

Refresh Count

Row Addressing

Device Bank Addressing

Device Configuration

Column Addressing

Module Rank Addressing

pdf: 09005aef80765fab, source: 09005aef806e1d28

DD8C16_32_64_128x64HDG.fm - Rev. B 9/04 EN

‡

PRODUCTS

AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY

MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

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