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30GWJ2CZ47C(L182,F

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size355KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

30GWJ2CZ47C(L182,F Overview

Rectifier Diode

30GWJ2CZ47C(L182,F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Base Number Matches1
30GWJ2CZ47C
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK
SCHOTTKY BARRIER TYPE
30GWJ2CZ47C
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Average Output Rectified Current
: V
RRM
= 40 V
: I
O
= 30 A
Unit: mm
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Surge
Voltage
(Note 1)
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
V
RRM
V
RRSM
I
O
I
FSM
T
j
T
stg
RATING
40
48
30
300 (50Hz)
330 (60Hz)
−40~125
−40~150
0.6
UNIT
V
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
12-10C1A
Note 1: Pulse Width (t
w
)
≤500ns,
duty (t
w
/ T)
≤1
/ 25
Weight: 2.0 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
(Note 3)
SYMBOL
V
FM
I
RRM
C
j
R
th (j−c)
I
FM
= 15A
V
RRM
= Rated
V
R
= 10V, f = 1.0MHz
Total DC, Junction to Case
TEST CONDITION
MIN
600
TYP.
0.55
15
2.5
MAX
V
mA
pF
°C/ W
Repetitive Peak Reverse Current
(Note 3)
Junction Capacitance
Thermal Resistance
(Note 3)
Note 3: A value applied to one cell.
POLARITY
1
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