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1.5KCD18

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
File Size161KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

1.5KCD18 Overview

Transient Suppressor,

1.5KCD18 Parametric

Parameter NameAttribute value
Maximum breakdown voltage19.8 V
Maximum non-repetitive peak reverse power dissipation1500 W
Reverse test voltage14.5 V
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN
ConfigurationSINGLE
Maximum forward voltage (VF)3.5 V
Number of components1
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage14.5 V
Maximum reverse current1 µA
Minimum breakdown voltage16.2 V
Breakdown voltage nominal value18 V
Maximum clamping voltage26.5 V
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
surface mountYES
technologyAVALANCHE
Package shapeROUND
Package formDISK BUTTON
Terminal formNO LEAD
Terminal locationEND
Shell connectionCATHODE
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
GuidelineMIL-STD-202
JESD-30 codeO-CEDB-N2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Is it Rohs certified?Yes
YTEOL6.19
Objectid8329204392
Reach Compliance CodeCompliant
Country Of OriginThailand
ECCN codeEAR99
Is SamacsysN

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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