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N25Q032A13EF840F TR

Description
FLASH - NOR 存储器 IC 32Mb(8M x 4) SPI 108 MHz 8-VDFPN(MLP8)(8x6)
Categorysemiconductor    memory   
File Size1008KB,82 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

N25Q032A13EF840F TR Overview

FLASH - NOR 存储器 IC 32Mb(8M x 4) SPI 108 MHz 8-VDFPN(MLP8)(8x6)

N25Q032A13EF840F TR Parametric

Parameter NameAttribute value
category
MakerMicron Technology
series-
PackageTape and Reel (TR)
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage32Mb(8M x 4)
memory interfaceSPI
Write cycle time - words, pages8ms,5ms
Voltage - Power supply2.7V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing8-VDFN Exposed Pad
Supplier device packaging8-VDFPN(MLP8)(8x6)
Clock frequency108 MHz
Basic product numberN25Q032A13
32Mb, 3V, Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q032A
Features
SPI-compatible serial bus interface
108 MHz (MAX) clock frequency
2.7–3.6V single supply voltage
Dual/quad I/O instruction provides increased
throughput up to 432 MHz
Supported protocols
– Extended SPI, dual I/O, and quad I/O
Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
PROGRAM/ERASE SUSPEND operations
Continuous read of entire memory via a single com-
mand
– FAST READ
– QUAD or DUAL OUTPUT FAST READ
– QUAD or DUAL I/O FAST READ
Flexible to fit application
– Configurable number of dummy cycles
– Configurable output buffer
– RESET function available upon customer request
64-byte, user-lockable, one-time programmable
(OTP) dedicated area
Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by four nonvolatile bits (BP0, BP1, BP2,
and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard, 2-byte signature (BA16h)
– Unique ID code: 17 read-only bytes, including:
• Two additional extended device ID bytes to
identify device factory options
• Customized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages (JEDEC-standard, RoHS compliant)
– F4 = U-PDFN-8 4mm x 3mm (MLP8)
– F6 = V-PDFN-8 6mm x 5mm (MLP8)
– F8 = V-PDFN-8 8mm x 6mm (MLP8)
– 12 = T-PBGA-24b05 6mm x 8mm
– SC = SOP2-8 150 mils body width (SO8N)
– SF = SOP2-16 300 mils body width (SO16W)
– SE = SOP2-8 208 mils body width (SO8W)
CCMTD-1725822587-8448
n25q_32mb_3v_65nm.pdf - Rev. K 05/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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