BC182
BC182
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Storage Junction Temperature Range
Parameter
Value
50
60
6
100
- 55 ~ 150
Units
V
V
V
mA
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 2mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 50V, V
BE
= 0
V
EB
= 4V, I
E
= 0
V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
=
2mA
V
CE
= 5V, I
C
= 100mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 10mA, f = 100MHz
V
CE
= 10V, I
C
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA, f = 1KHz
V
CE
= 5V, I
C
= 0.2mA
R
S
= 2KΩ, f = 1KHz
125
0.55
150
5
500
10
dB
40
120
80
Min.
50
60
6
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Leakage Current
On Characteristics
h
FE
DC Current Gain
500
0.25
0.6
1.2
0.7
V
V
V
MHz
pF
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Dynamic Characteristics
f
T
Current Gain Bandwidth Product
C
ob
h
fe
NF
Output Capacitance
Small Signal Current Gain
Noise Figure
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2005
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Definition of Terms
Datasheet Identification
Advance Information
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Formative or
In Design
Definition
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. I16
Embedded System
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