MPS5179 / MMBT5179 / PN5179
MPS5179
MMBT5179
C
PN5179
E
C
B
TO-92
E
SOT-23
Mark: 3C
B
C
E
TO-92
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100
µA
to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12
20
2.5
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
PN/MPS5179
350
2.8
357
*MMBT5179
225
1.8
556
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
MPS5179 / MMBT5179 / PN5179
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
CEO(
sus
)
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 3.0 mA, I
B
= 0
I
C
= 1.0
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 15 V, I
E
= 0
V
CB
= 15 V, T
A
= 150°C
12
20
2.5
0.02
1.0
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 3.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
25
250
0.4
1.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
rb’C
c
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
I
C
= 5.0 mA, V
CE
= 6.0 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 0.1 to 1.0 MHz
I
C
= 2.0 mA, V
CE
= 6.0 V,
f = 1.0 kHz
I
C
= 2.0 mA, V
CB
= 6.0 V,
f = 31.9 MHz
I
C
= 1.5 mA, V
CE
= 6.0 V,
R
S
= 50Ω, f = 200 MHz
900
2000
1.0
25
3.0
300
14
5.0
ps
dB
MHz
pF
3
FUNCTIONAL TEST
G
pe
P
O
Amplifier Power Gain
Power Output
V
CE
= 6.0 V, I
C
= 5.0 mA,
f = 200 MHz
V
CB
= 10 V, I
E
= 12 mA,
f
≥
500 MHz
15
20
dB
mW
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
MPS5179 / MMBT5179 / PN5179
NPN RF Transistor
(continued)
Typical Characteristics
250
h
FE
- DC CURRENT GAIN
125 ° C
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
DC Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β
=
10
200
150
100
50
0
0.001
I
C
25 ° C
0.15
125 °C
0.1
25 °C
- 40 °C
V
CE
=
5V
0.01
- COLLECTOR CURRE NT (A)
0.1
0.05
- 40 °C
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
20 30
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE -EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
Base-Emitter ON Voltage vs
Collector Current
1
1
- 40 °C
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
125 °C
0.6
β
=
10
0.4
V
CE
=
5V
0.4
0.1
I
C
1
10
20 30
- COLLE CTOR CURRENT ( mA)
0.2
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
50
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT ( nA)
P
D
- POWER DISSIPATION (mW)
Power Dissipation vs
Ambient Temperature
625
100
V
10
CB
= 20V
TO-92
500
375
250
125
0
SOT-23
1
0.1
25
50
75
100
125
T
A
- AMBIENT TE MPERATURE (
°
C)
150
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
MPS5179 / MMBT5179 / PN5179
NPN RF Transistor
(continued)
Test Circuit
50 pF
(NOTE 2)
175 pF
500 mHz Output
into 50Ω
Ω
RFC
(NOTE 1)
NOTE 1:
2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2:
9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
1000 pF
1000 pF
2.2 KΩ
Ω
RFC
-V
ee
V
CC
FIGURE 1: 500 MHz Oscillator Circuit
3
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
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