ZC824 datasheet, PDF - EEWORLD Datasheet

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ZC824: Description47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; Categorysemiconductor Discrete semiconductor; File Size137KB，6 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZC824 Overview

47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

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830 series

SILICON 28V HYPERABRUPT VARACTOR DIODES

ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series

Device Description

A range of silicon varactor diodes for use in frequency control and

filtering. Featuring closely controlled CV characteristics and high

Q. Low reverse current ensures very low phase noise

performance. Available in single or dual common cathode format

in a wide rage of miniature surface mount packages.

Features

Close tolerance C-V characteristics

High tuning ratio

Low I

(typically 200pA)

Excellent phase noise performance

High Q

Range of miniature surface mount packages

Applications

VCXO and TCXO

Wireless communications

Pagers

Mobile radio

*Where steeper CV slopes are required there is the 12V hyperabrupt range.

ZC930, ZMV930, ZV930, ZV931 Series

ISSUE 6 - JANUARY 2002

ZC824 Related Products

	ZC824	ZC820	ZC821	ZC822	ZC823	ZC825	ZC826
Description	47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	15 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	33 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	68 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	-	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	-	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	-	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2	O-PBCY-W2	O-PBCY-W2
Reach Compliance Code	-	unknown	-	unknown	unknown	unknow	unknown
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	-	25 V	-	25 V	25 V	25 V	25 V
Configuration	-	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	-	20%	-	20%	20%	20%	20%
Minimum diode capacitance ratio	-	5	-	5	5	5	5
Nominal diode capacitance	-	10 pF	-	22 pF	33 pF	68 pF	100 pF
Diode component materials	-	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	-	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	-	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2	O-PBCY-W2	O-PBCY-W2
JESD-609 code	-	e0	-	e0	e0	e0	e0
Number of components	-	1	-	1	1	1	1
Number of terminals	-	2	-	2	2	2	2
Maximum operating temperature	-	200 °C	-	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-	-65 °C	-	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Maximum power dissipation	-	0.3 W	-	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	-	300	-	200	200	100	100
Maximum repetitive peak reverse voltage	-	25 V	-	25 V	25 V	25 V	25 V
surface mount	-	NO	-	NO	NO	NO	NO
Terminal surface	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Varactor Diode Classification	-	HYPERABRUPT	-	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT

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