ZC826 datasheet, PDF - EEWORLD Datasheet

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ZC826: Description100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size137KB，6 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZC826 Overview

100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC826 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	O-PBCY-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	25 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Minimum diode capacitance ratio	5
Nominal diode capacitance	100 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-PBCY-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Maximum power dissipation	0.3 W
Certification status	Not Qualified
minimum quality factor	100
Maximum repetitive peak reverse voltage	25 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Varactor Diode Classification	HYPERABRUPT

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830 series

SILICON 28V HYPERABRUPT VARACTOR DIODES

ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series

Device Description

A range of silicon varactor diodes for use in frequency control and

filtering. Featuring closely controlled CV characteristics and high

Q. Low reverse current ensures very low phase noise

performance. Available in single or dual common cathode format

in a wide rage of miniature surface mount packages.

Features

Close tolerance C-V characteristics

High tuning ratio

Low I

(typically 200pA)

Excellent phase noise performance

High Q

Range of miniature surface mount packages

Applications

VCXO and TCXO

Wireless communications

Pagers

Mobile radio

*Where steeper CV slopes are required there is the 12V hyperabrupt range.

ZC930, ZMV930, ZV930, ZV931 Series

ISSUE 6 - JANUARY 2002

ZC826 Related Products

	ZC826	ZC820	ZC821	ZC822	ZC823	ZC824	ZC825
Description	100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	15 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	33 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	68 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	-	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors	-	Zetex Semiconductors
package instruction	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2
Reach Compliance Code	unknown	unknown	-	unknown	unknown	-	unknow
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-	EAR99
Minimum breakdown voltage	25 V	25 V	-	25 V	25 V	-	25 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	-	SINGLE
Diode Capacitance Tolerance	20%	20%	-	20%	20%	-	20%
Minimum diode capacitance ratio	5	5	-	5	5	-	5
Nominal diode capacitance	100 pF	10 pF	-	22 pF	33 pF	-	68 pF
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	-	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2
JESD-609 code	e0	e0	-	e0	e0	-	e0
Number of components	1	1	-	1	1	-	1
Number of terminals	2	2	-	2	2	-	2
Maximum operating temperature	200 °C	200 °C	-	200 °C	200 °C	-	200 °C
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-65 °C	-	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND	ROUND	-	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL
Maximum power dissipation	0.3 W	0.3 W	-	0.3 W	0.3 W	-	0.3 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified
minimum quality factor	100	300	-	200	200	-	100
Maximum repetitive peak reverse voltage	25 V	25 V	-	25 V	25 V	-	25 V
surface mount	NO	NO	-	NO	NO	-	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	-	WIRE	WIRE	-	WIRE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	-	BOTTOM
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	-	HYPERABRUPT	HYPERABRUPT	-	HYPERABRUPT

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