ZC823 datasheet, PDF - EEWORLD Datasheet

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ZC823: Description33 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size137KB，6 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZC823 Overview

33 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC823 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	O-PBCY-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	25 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Minimum diode capacitance ratio	5
Nominal diode capacitance	33 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-PBCY-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Maximum power dissipation	0.3 W
Certification status	Not Qualified
minimum quality factor	200
Maximum repetitive peak reverse voltage	25 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Varactor Diode Classification	HYPERABRUPT

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830 series

SILICON 28V HYPERABRUPT VARACTOR DIODES

ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series

Device Description

A range of silicon varactor diodes for use in frequency control and

filtering. Featuring closely controlled CV characteristics and high

Q. Low reverse current ensures very low phase noise

performance. Available in single or dual common cathode format

in a wide rage of miniature surface mount packages.

Features

Close tolerance C-V characteristics

High tuning ratio

Low I

(typically 200pA)

Excellent phase noise performance

High Q

Range of miniature surface mount packages

Applications

VCXO and TCXO

Wireless communications

Pagers

Mobile radio

*Where steeper CV slopes are required there is the 12V hyperabrupt range.

ZC930, ZMV930, ZV930, ZV931 Series

ISSUE 6 - JANUARY 2002

ZC823 Related Products

	ZC823	ZC820	ZC821	ZC822	ZC824	ZC825	ZC826
Description	33 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	15 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	68 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	incompatible	incompatible	-	incompatible	-	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors	-	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors
package instruction	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2
Reach Compliance Code	unknown	unknown	-	unknown	-	unknow	unknown
ECCN code	EAR99	EAR99	-	EAR99	-	EAR99	EAR99
Minimum breakdown voltage	25 V	25 V	-	25 V	-	25 V	25 V
Configuration	SINGLE	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Diode Capacitance Tolerance	20%	20%	-	20%	-	20%	20%
Minimum diode capacitance ratio	5	5	-	5	-	5	5
Nominal diode capacitance	33 pF	10 pF	-	22 pF	-	68 pF	100 pF
Diode component materials	SILICON	SILICON	-	SILICON	-	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-PBCY-W2	O-PBCY-W2	-	O-PBCY-W2	-	O-PBCY-W2	O-PBCY-W2
JESD-609 code	e0	e0	-	e0	-	e0	e0
Number of components	1	1	-	1	-	1	1
Number of terminals	2	2	-	2	-	2	2
Maximum operating temperature	200 °C	200 °C	-	200 °C	-	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND	-	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Maximum power dissipation	0.3 W	0.3 W	-	0.3 W	-	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
minimum quality factor	200	300	-	200	-	100	100
Maximum repetitive peak reverse voltage	25 V	25 V	-	25 V	-	25 V	25 V
surface mount	NO	NO	-	NO	-	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	-	WIRE	-	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	-	BOTTOM	BOTTOM
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	-	HYPERABRUPT	-	HYPERABRUPT	HYPERABRUPT

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