Power Field-Effect Transistor, 0.36A I(D), 240V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| Parts packaging code | SOT-223 |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Contacts | 4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V |
| Maximum drain current (ID) | 0.36 A |
| Maximum drain-source on-resistance | 10 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 1.44 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BSP89E6327 | BSP89E-6327 | |
|---|---|---|
| Description | Power Field-Effect Transistor, 0.36A I(D), 240V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | 0.36A, 240V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN |
| Parts packaging code | SOT-223 | SOT-223 |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Contacts | 4 | 4 |
| Reach Compliance Code | unknown | unknown |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V | 240 V |
| Maximum drain current (ID) | 0.36 A | 0.36 A |
| Maximum drain-source on-resistance | 10 Ω | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 |
| Number of terminals | 4 | 4 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
京公网安备 11010802033920号
EEWORLD
