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M10082040054X0IWAR

Description
MRAM(磁阻式 RAM) 存储器 IC 8Mb(2M x 4) - 54 MHz 8-DFN(5x6)
Categorysemiconductor    memory   
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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M10082040054X0IWAR Overview

MRAM(磁阻式 RAM) 存储器 IC 8Mb(2M x 4) - 54 MHz 8-DFN(5x6)

M10082040054X0IWAR Parametric

Parameter NameAttribute value
category
MakerRenesas Electronics Corporation
series-
PackageTape and Reel (TR)
memory typenon-volatile
memory formatRAM
technologyMRAM (Magnetoresistive RAM)
storage8Mb(2M x 4)
memory interface-
Clock frequency54 MHz
Write cycle time - words, pages-
Voltage - Power supply1.71V ~ 2V
Operating temperature-40°C ~ 85°C
Installation typesurface mount type
Package/casing8-WDFN Exposed Pad
Supplier device packaging8-DFN(5x6)
Basic product numberM10082040054
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