OM55N10SC datasheet, PDF - EEWORLD Datasheet

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OM55N10SC: Description60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA; Categorysemiconductor Discrete semiconductor; File Size62KB，8 Pages; ManufacturerETC

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OM55N10SC Overview

60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA

OM55N10SC Parametric

Parameter Name	Attribute value
Minimum breakdown voltage	100 V
Number of terminals	3
state	Transferred
Rated avalanche energy	720 mJ
Shell connection	ISOLATED
structure	SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_	60 A
Maximum leakage current	60 A
Maximum drain on-resistance	0.0250 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
jedec_95_code	TO-258AA
jesd_30_code	R-MSFM-P3
Number of components	1
operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 Cel
Packaging Materials	METAL
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
larity_channel_type	P-CHANNEL
wer_dissipation_max__abs_	130 W
Maximum leakage current pulse	180 A
qualification_status	COMMERCIAL
sub_category	FET General Purpose Powe
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC

OM55N10SA OM75N05SA OM75N06SA

LOW VOLTAGE, LOW R

DS(on)

POWER MOSFETS

IN HERMETIC ISOLATED PACKAGE

50V, 60V, And 100V Ultra Low R

DS(on)

Power MOSFETs In TO-254 And TO-258

Isolated Packages

FEATURES

•

Isolated Hermetic Metal Packages

Ultra Low R

DS(on)

Low Conductive Loss/Low Gate Charge

Available Screened To MIL-S-19500, TX, TXV And S Levels

Ceramic Feedthroughs available

DESCRIPTION

This series of hermetic packaged MOSFETs are ideally suited for low voltage

applications; battery powered voltage power supplies, motor controls, dc to dc

converters and synchronous rectification. The low conduction loss allows smaller

heat sinking and the low gate change simpler drive circuitry.

MAXIMUM RATINGS

(Per Device)

PART NO.

OM60N10SC

OM55N10SC

OM55N10SA

OM75N06SC

OM75N06SA

OM75N05SC

OM75N05SA

(V)

100

DS(on)

( )

.025

.030

.035

.016

.018

.016

.018

(A)

Package

TO-258AA

TO-254AA

TO-258AA

TO-254AA

TO-258AA

TO-254AA

3.1

SCHEMATIC

Drain

PIN CONNECTION

TO-254AA

TO-258AA

Gate

Source

Pin 1:

Pin 2:

Pin 3:

2 3

Drain

Source

Gate

Pin 1:

Pin 2:

Pin 3:

Drain

Source

Gate

4 11 R1

Supersedes 2 07 R0

3.1 - 47

OM55N10SC Related Products

	OM55N10SC	OM55N10SA	OM60N10S	OM60N10SC	OM75N05SA	OM75N05SC	OM75N06SA	OM75N06SC
Description	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
Minimum breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Number of terminals	3	3	3	3	3	3	3	3
state	Transferred	Transferred	Transferred	Transferred	Transferred	Transferred	Transferred	Transferred
Rated avalanche energy	720 mJ	720 mJ	720 mJ	720 mJ	720 mJ	720 mJ	720 mJ	720 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_	60 A	60 A	60 A	60 A	60 A	60 A	60 A	60 A
Maximum leakage current	60 A	60 A	60 A	60 A	60 A	60 A	60 A	60 A
Maximum drain on-resistance	0.0250 ohm	0.0250 ohm	0.0250 ohm	0.0250 ohm	0.0250 ohm	0.0250 ohm	0.0250 ohm	0.0250 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
jedec_95_code	TO-258AA	TO-258AA	TO-258AA	TO-258AA	TO-258AA	TO-258AA	TO-258AA	TO-258AA
jesd_30_code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1	1	1	1	1	1
operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel
Packaging Materials	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
larity_channel_type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
wer_dissipation_max__abs_	130 W	130 W	130 W	130 W	130 W	130 W	130 W	130 W
Maximum leakage current pulse	180 A	180 A	180 A	180 A	180 A	180 A	180 A	180 A
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe	FET General Purpose Powe
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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