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OM75N05SA

Description
60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
Categorysemiconductor    Discrete semiconductor   
File Size62KB,8 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

OM75N05SA Overview

60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA

OM75N05SA Parametric

Parameter NameAttribute value
Minimum breakdown voltage100 V
Number of terminals3
stateTransferred
Rated avalanche energy720 mJ
Shell connectionISOLATED
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_60 A
Maximum leakage current60 A
Maximum drain on-resistance0.0250 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-258AA
jesd_30_codeR-MSFM-P3
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsMETAL
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
larity_channel_typeP-CHANNEL
wer_dissipation_max__abs_130 W
Maximum leakage current pulse180 A
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Powe
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low R
DS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
V
DS
(V)
100
100
100
60
60
50
50
R
DS(on)
( )
.025
.030
.035
.016
.018
.016
.018
I
D
(A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
3.1
SCHEMATIC
Drain
PIN CONNECTION
TO-254AA
TO-258AA
Gate
Source
1
Pin 1:
Pin 2:
Pin 3:
2 3
Drain
Source
Gate
1
Pin 1:
Pin 2:
Pin 3:
2
3
Drain
Source
Gate
4 11 R1
Supersedes 2 07 R0
3.1 - 47

OM75N05SA Related Products

OM75N05SA OM55N10SC OM55N10SA OM60N10S OM60N10SC OM75N05SC OM75N06SA OM75N06SC
Description 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 60 A, 100 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
Minimum breakdown voltage 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Number of terminals 3 3 3 3 3 3 3 3
state Transferred Transferred Transferred Transferred Transferred Transferred Transferred Transferred
Rated avalanche energy 720 mJ 720 mJ 720 mJ 720 mJ 720 mJ 720 mJ 720 mJ 720 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_ 60 A 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Maximum leakage current 60 A 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Maximum drain on-resistance 0.0250 ohm 0.0250 ohm 0.0250 ohm 0.0250 ohm 0.0250 ohm 0.0250 ohm 0.0250 ohm 0.0250 ohm
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jedec_95_code TO-258AA TO-258AA TO-258AA TO-258AA TO-258AA TO-258AA TO-258AA TO-258AA
jesd_30_code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
Number of components 1 1 1 1 1 1 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel
Packaging Materials METAL METAL METAL METAL METAL METAL METAL METAL
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
larity_channel_type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
wer_dissipation_max__abs_ 130 W 130 W 130 W 130 W 130 W 130 W 130 W 130 W
Maximum leakage current pulse 180 A 180 A 180 A 180 A 180 A 180 A 180 A 180 A
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe
surface mount NO NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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