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BSP250,135

Description
BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin
CategoryDiscrete semiconductor    The transistor   
File Size207KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BSP250,135 Overview

BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin

BSP250,135 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeSC-73
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)12 A
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

BSP250,135 Related Products

BSP250,135 BSP250,115
Description BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 3A (Tc) Gate-source threshold voltage: 2.8V @ 1mA Drain-source on-resistance: 250mΩ @ 1A, 10V Maximum power consumption Dispersion (Ta=25°C): 1.65W Type: P-channel
Brand Name Nexperia Nexperia
Parts packaging code SC-73 SC-73
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Manufacturer packaging code SOT223 SOT223
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 3 A 3 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 12 A 12 A
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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