APT10M25BVR
100V
75A 0.025
Ω
POWER MOS V
®
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
TO-247
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
5
5
All Ratings: T
C
= 25°C unless otherwise specified.
APT10M25BVR
UNIT
Volts
Amps
100
75
300
±30
±40
300
2.4
-55 to 150
300
75
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
5
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
5
MIN
TYP
MAX
UNIT
Volts
Amps
100
75
0.025
250
1000
±100
2
4
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
nA
Volts
050-5513 Rev A
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-802 8
Phone: (33) 5 57 92 15 15
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-036 4
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10M25BVR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= 0.5 I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
4300
1600
650
150
28
75
13
22
40
10
5160
2240
975
225
42
115
26
44
60
20
ns
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
1
2
5
5
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
(Body Diode)
(Body Diode)
75
300
1.3
150
1.0
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Q
rr
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.42
40
4
Starting T = +25°C, L = 0.53mH, R = 25Ω, Peak I = 75A
j
G
L
5
The maximum current is limited by lead temperature.
1
Repetitive Rating: Pulse width limited by maximum T
j
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.1
0.05
0.01
0.005
050-5513 Rev A
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
APT10M25BVR
150
I , DRAIN CURRENT (AMPERES)
D
VGS=10V & 15V
I , DRAIN CURRENT (AMPERES)
150
V GS=15V
10V
7V
100
75
50
6.5V
6V
5.5V
5V
25
4.5V
0
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.2
V
GS
125
7V
100
6.5V
6V
5.5V
5V
25
4.5V
4V
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
150
T J = -55°C
TJ = +25°C
VDS> I D (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ < 0.5 % DUTY CYCLE
125
75
50
D
0
4V
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
I , DRAIN CURRENT (AMPERES)
D
125
1.1
VGS=10V
100
75
50
T J = +125°C
1.0
0.9
VGS =20V
25
T J = +125°C
T J = +25°C
T J = -55°C
DS
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
80
I , DRAIN CURRENT (AMPERES)
D
R
0
0.8
0
25
50
75
100
125
150
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
BV
25
I
D
= 0.5 I
D
[Cont.]
V
= 10V
1.15
1.10
60
1.05
40
1.00
20
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.00
0
DSS
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0.90
-50
GS
1.75
1.1
1.0
1.50
1.25
1.00
0.9
0.8
0.7
050-5513 Rev A
0.75
DS
0.50
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
R
APT10M25BVR
400
100µS
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY R
DS
(ON)
15,000
10,000
5,000
Coss
Ciss
Ciss
Coss
Crss
50
1mS
C, CAPACITANCE (pF)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
10mS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
1,000
500
1
5
10
50
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
I
D
= I
D
[Cont.]
1
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
T J =+25°C
100
16
VDS =20V
VDS =50V
12
VDS=80V
8
10
5
4
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
050-5513 Rev A
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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