AM27H010-45LI datasheet, PDF - EEWORLD Datasheet

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AM27H010-45LI: Description1 Megabit (131,072 x 8-bit) high speed cmos eprom; Categorystorage storage; File Size640KB，12 Pages; ManufacturerAMD; Websitehttp://www.amd.com

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AM27H010-45LI Overview

1 Megabit (131,072 x 8-bit) high speed cmos eprom

AM27H010-45LI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	WQCCN, LCC32,.45X.55
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
length	13.97 mm
memory density	1048576 bit
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	WQCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER, WINDOW
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3.556 mm
Maximum standby current	0.025 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
width	11.43 mm
Base Number Matches	1

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AM27H010-45LI Related Products

	AM27H010-45LI	AM27H010-45DI	AM27H010-45DC	AM27H010-45LIB	AM27H010-45DIB	AM27H010-45DEB	AM27H010-45DE
Description	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	-
Parts packaging code	QFJ	DIP	DIP	QFJ	DIP	-	-
package instruction	WQCCN, LCC32,.45X.55	WDIP, DIP32,.6	WDIP, DIP32,.6	WQCCN, LCC32,.45X.55	WDIP, DIP32,.6	-	-
Contacts	32	32	32	32	32	-	-
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	-	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	-
Maximum access time	45 ns	45 ns	45 ns	45 ns	45 ns	-	-
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	-	-
JESD-30 code	R-CQCC-N32	R-GDIP-T32	R-GDIP-T32	R-CQCC-N32	R-GDIP-T32	-	-
JESD-609 code	e0	e0	e0	e0	e0	-	-
length	13.97 mm	42.1005 mm	42.1005 mm	13.97 mm	42.1005 mm	-	-
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	-	-
Memory IC Type	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM	-	-
memory width	8	8	8	8	8	-	-
Number of functions	1	1	1	1	1	-	-
Number of terminals	32	32	32	32	32	-	-
word count	131072 words	131072 words	131072 words	131072 words	131072 words	-	-
character code	128000	128000	128000	128000	128000	-	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	-
Maximum operating temperature	85 °C	85 °C	70 °C	85 °C	85 °C	-	-
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-
organize	128KX8	128KX8	128KX8	128KX8	128KX8	-	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	-
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	-	-
encapsulated code	WQCCN	WDIP	WDIP	WQCCN	WDIP	-	-
Encapsulate equivalent code	LCC32,.45X.55	DIP32,.6	DIP32,.6	LCC32,.45X.55	DIP32,.6	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	CHIP CARRIER, WINDOW	IN-LINE, WINDOW	IN-LINE, WINDOW	CHIP CARRIER, WINDOW	IN-LINE, WINDOW	-	-
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	-
power supply	5 V	5 V	5 V	5 V	5 V	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Maximum seat height	3.556 mm	5.588 mm	5.588 mm	3.556 mm	5.588 mm	-	-
Maximum standby current	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A	-	-
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	-	-
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	-
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	-
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	-	-
surface mount	YES	NO	NO	YES	NO	-	-
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	-
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Terminal form	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	-	-
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	-	-
Terminal location	QUAD	DUAL	DUAL	QUAD	DUAL	-	-
width	11.43 mm	15.24 mm	15.24 mm	11.43 mm	15.24 mm	-	-
Maker	-	AMD	AMD	AMD	AMD	-	-

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