AM27H010-45DEB datasheet, PDF - EEWORLD Datasheet

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AM27H010-45DEB: Description1 Megabit (131,072 x 8-bit) high speed cmos eprom; File Size640KB，12 Pages; ManufacturerAMD; Websitehttp://www.amd.com

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1 Megabit (131,072 x 8-bit) high speed cmos eprom

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AM27H010-45DEB Related Products

	AM27H010-45DEB	AM27H010-45DI	AM27H010-45DC	AM27H010-45LI	AM27H010-45LIB	AM27H010-45DIB	AM27H010-45DE
Description	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom	1 Megabit (131,072 x 8-bit) high speed cmos eprom
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	-	AMD	AMD	-	AMD	AMD	-
Parts packaging code	-	DIP	DIP	QFJ	QFJ	DIP	-
package instruction	-	WDIP, DIP32,.6	WDIP, DIP32,.6	WQCCN, LCC32,.45X.55	WQCCN, LCC32,.45X.55	WDIP, DIP32,.6	-
Contacts	-	32	32	32	32	32	-
Reach Compliance Code	-	unknown	unknown	unknown	unknown	unknown	-
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	-
Maximum access time	-	45 ns	45 ns	45 ns	45 ns	45 ns	-
I/O type	-	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-30 code	-	R-GDIP-T32	R-GDIP-T32	R-CQCC-N32	R-CQCC-N32	R-GDIP-T32	-
JESD-609 code	-	e0	e0	e0	e0	e0	-
length	-	42.1005 mm	42.1005 mm	13.97 mm	13.97 mm	42.1005 mm	-
memory density	-	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	-
Memory IC Type	-	UVPROM	UVPROM	UVPROM	UVPROM	UVPROM	-
memory width	-	8	8	8	8	8	-
Number of functions	-	1	1	1	1	1	-
Number of terminals	-	32	32	32	32	32	-
word count	-	131072 words	131072 words	131072 words	131072 words	131072 words	-
character code	-	128000	128000	128000	128000	128000	-
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	-	85 °C	70 °C	85 °C	85 °C	85 °C	-
Minimum operating temperature	-	-40 °C	-	-40 °C	-40 °C	-40 °C	-
organize	-	128KX8	128KX8	128KX8	128KX8	128KX8	-
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	-	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	-
encapsulated code	-	WDIP	WDIP	WQCCN	WQCCN	WDIP	-
Encapsulate equivalent code	-	DIP32,.6	DIP32,.6	LCC32,.45X.55	LCC32,.45X.55	DIP32,.6	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	-	IN-LINE, WINDOW	IN-LINE, WINDOW	CHIP CARRIER, WINDOW	CHIP CARRIER, WINDOW	IN-LINE, WINDOW	-
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
power supply	-	5 V	5 V	5 V	5 V	5 V	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum seat height	-	5.588 mm	5.588 mm	3.556 mm	3.556 mm	5.588 mm	-
Maximum standby current	-	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A	-
Maximum slew rate	-	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	-
Maximum supply voltage (Vsup)	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-
Nominal supply voltage (Vsup)	-	5 V	5 V	5 V	5 V	5 V	-
surface mount	-	NO	NO	YES	YES	NO	-
technology	-	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	-	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE	-
Terminal pitch	-	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	-
Terminal location	-	DUAL	DUAL	QUAD	QUAD	DUAL	-
width	-	15.24 mm	15.24 mm	11.43 mm	11.43 mm	15.24 mm	-

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