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AM27H010-45DI

Description
1 Megabit (131,072 x 8-bit) high speed cmos eprom
Categorystorage    storage   
File Size640KB,12 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Download Datasheet Parametric Compare View All

AM27H010-45DI Overview

1 Megabit (131,072 x 8-bit) high speed cmos eprom

AM27H010-45DI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerAMD
Parts packaging codeDIP
package instructionWDIP, DIP32,.6
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time45 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T32
JESD-609 codee0
length42.1005 mm
memory density1048576 bit
Memory IC TypeUVPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeWDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE, WINDOW
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.588 mm
Maximum standby current0.025 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

AM27H010-45DI Related Products

AM27H010-45DI AM27H010-45DC AM27H010-45LI AM27H010-45LIB AM27H010-45DIB AM27H010-45DEB AM27H010-45DE
Description 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom 1 Megabit (131,072 x 8-bit) high speed cmos eprom
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - -
Maker AMD AMD - AMD AMD - -
Parts packaging code DIP DIP QFJ QFJ DIP - -
package instruction WDIP, DIP32,.6 WDIP, DIP32,.6 WQCCN, LCC32,.45X.55 WQCCN, LCC32,.45X.55 WDIP, DIP32,.6 - -
Contacts 32 32 32 32 32 - -
Reach Compliance Code unknown unknown unknown unknown unknown - -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - -
Maximum access time 45 ns 45 ns 45 ns 45 ns 45 ns - -
I/O type COMMON COMMON COMMON COMMON COMMON - -
JESD-30 code R-GDIP-T32 R-GDIP-T32 R-CQCC-N32 R-CQCC-N32 R-GDIP-T32 - -
JESD-609 code e0 e0 e0 e0 e0 - -
length 42.1005 mm 42.1005 mm 13.97 mm 13.97 mm 42.1005 mm - -
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit - -
Memory IC Type UVPROM UVPROM UVPROM UVPROM UVPROM - -
memory width 8 8 8 8 8 - -
Number of functions 1 1 1 1 1 - -
Number of terminals 32 32 32 32 32 - -
word count 131072 words 131072 words 131072 words 131072 words 131072 words - -
character code 128000 128000 128000 128000 128000 - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - -
Maximum operating temperature 85 °C 70 °C 85 °C 85 °C 85 °C - -
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C - -
organize 128KX8 128KX8 128KX8 128KX8 128KX8 - -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - -
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED - -
encapsulated code WDIP WDIP WQCCN WQCCN WDIP - -
Encapsulate equivalent code DIP32,.6 DIP32,.6 LCC32,.45X.55 LCC32,.45X.55 DIP32,.6 - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form IN-LINE, WINDOW IN-LINE, WINDOW CHIP CARRIER, WINDOW CHIP CARRIER, WINDOW IN-LINE, WINDOW - -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - -
power supply 5 V 5 V 5 V 5 V 5 V - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
Maximum seat height 5.588 mm 5.588 mm 3.556 mm 3.556 mm 5.588 mm - -
Maximum standby current 0.025 A 0.025 A 0.025 A 0.025 A 0.025 A - -
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA - -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V - -
surface mount NO NO YES YES NO - -
technology CMOS CMOS CMOS CMOS CMOS - -
Temperature level INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Terminal form THROUGH-HOLE THROUGH-HOLE NO LEAD NO LEAD THROUGH-HOLE - -
Terminal pitch 2.54 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm - -
Terminal location DUAL DUAL QUAD QUAD DUAL - -
width 15.24 mm 15.24 mm 11.43 mm 11.43 mm 15.24 mm - -
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