SRN.KEN E L E C T R I C
C O M P A N Y ,
LTD,
SANKlDl
SWJ’KtIIlVG
1UWLAlOR HYRRTD lC
Type:
STR-S6301
1.
STR-S6301.
2. General
Hybrid JC
incorporated with a S-layer
Silkon
Transistor,
.
2.2
Construction:
Plastic Mold
Package
(‘kansfer
Mold) _
.
2.3 Applicat,ion:
Dire& control.,
RLC.
type
Swjtching
RcguJator featuring Drjve
Circuit
and the Over Current
Protecljon.
(using
Photo Couplerb as
pri
nrarykccondary
isolation
element,)
2.1
Category
:
3.
FTuivalent
Circuit
Trl
The
present
specifications shall
only
apply to
&Sanken
SwitchinR Regulator Ilybrjd IC, type
1 .Cogxtor
i.
!;h&
ter/bnmon
(Power
Tr .
>
4: ..-
7,EartWCurrent Detector
8 .lkive Tr2 Base
9 .YhoLo Coupler (-)
Drj ve
Control
5.
J
6.
Current Detectm Base
4.
hw33rance
and
Outline
4
. 1.
Appearance
‘J’he
MY
shall
be
clean
and
4.2
Outline
Drawings
shall not bear
any stiin, rust or flaw,
Refer to PaEe 9,
4.3
Marking
The type number
and
lot
number
shall
be
legitimat~.ly be
marked
by laser
printing;,
Refer
to
Page 9.
Date:
DecL 16,
1991
Specifhtion
N
O
.:
SW-
17J_7OE
1/Y
5, Maxhe Ratings (T&5r)
.P--. - - - - __-I-____-___-.
_--- -VP I _ _ .-Be I_. .--__ -
Unit
--~;;;&y--;;--~-
DescripEion
Symbol
liat.i ng
.- ----. _ .-_-. .--. ._-“-
---
- ------ .” . - . . __ .
_ . . . . . . . __ . _ _._.I,
Trl Colhc
tor4hi ttor Voltage
hx?%
- - -v-.b.--- --I*- _-
500
V
-.a*__
. w-w--. ,..--. --.
XI
Ph# 4-2
Applying
Voktage
-
12
v2-d
.--_-- ,.--
-A-B
.-L-P-,
.-_--v
- .-- -.
.
1,,---WC_
-
---
V z- s
Pin!!
Z-5
Applying
Vol
tage
12
v
*
I-_s._---._..__---. ._ __-. G-s-- --*- -.-A.--_-. - ---- _-
.---..--p-L
30
Yin# 5-8
Applying Voltage
v
Vs- 4
a.
-Y-B--. _-
..-
P.i.n#
7-6
Applying Voltage
V
5
v7-
6
- ..-- ---- -*de--.._ .__- _.. -
- _-.--. ..-.._-. . . _ . _ . ..I.. . --I*
Tr
1 COJ. lector Current
.._-- .-.. .
-_.. -.-
. m.. . e-q.. . I
__-
Tr4 Collector
Current
.I_-
D2
Forward Current
_P -..-.
1O(Pulse:20)
500
brr4
I
. _Y
~(-II~LI
ZYNfD2)
--
I
INtD3)
A
-
rnA
------.
- - -
-
---.I.--.
I--
%2
- -
Da
Forward Current
--I.
-.
_
100
500
mA
.-
- - ,
_
RIA
Max.
Power
Did
paI.ion
F’D
-P-~--P”.
Trl
-
Junction
Temperature
L
-
-
u
p
-
Frame
Temperature
(Operating)
._
3.2
No fin
_--. _- W --“l”----r,----.F3
___ -_
I
2.7
T, r=lOO”C
X3
-_--I
+I50
.-h__-
-.-_
"C /
-..
,
---
%1
Tc2
Storage Tempmature
-. ---
TatIs
-30
- +125 *c
----_
-.-_P
Max.
011 tput Curren I;
_-
10
1.7
-----_q
Trl Characteristic
----.
-_-.-
Vo =115V
%5
-A___. _ _ _....
_
_.--I
__
Conditions
_I__
--.------- _.--
8. bctrical Characterist.ic
-
(T&!iV)
.--C__v
-
-
Description
-
- -WI-.
Symb0.I
_- -
Ratings Unit
- - -
0.5 Max.
-- L-p-- _-- . . .--- ------_---~_-~..__ V
COllectOr
Cut-Off
Current
ICEX
1.0
Mm,
mA
‘-4-m-p - ___..._,
.7_ m-m-_
Rase-Emitter Sahraticjn Volt; VDe (3ATj
1.5 Max. +
I,_.._ - - - _ _ .-I-.
IX:
Current Gain
- . - - I - . _ - - - ,-
-
--.--- .P -_
Swi
tchi nB Time
-. _-_-
he
.--.-
Cdlector
Saturation Vollage VCatSATI
1c =6A, I,=I.2A
VcE=.soov, vrse =-I ,sv
_--
1-w-.-
*-
Thermal Resistance
WI_ _---
Ic =fiA,
Jn=1.2A
1
. . -__--_
15-40
VCE=/IV, Tc=lA
-- --P..
-
- --_ --.
LCZ
0.7
“C/W
_-- - - - - --..--_-
- Junction--Internal
Frame
- - - .--.. ,._-_,
.-
L
tr
<-. --.- -I-, _- _ _. ._P*- - - .____I___
10
Max. vs Measuring Circuit
#I
0.6
Max.
-.- ----- ---. .-___ _.___. ___
- --a___
2) Suggedd
Sikone Grease:
C-746
8. Other Conditions
YG6260
SW?2
I’ORAY SILICONE
WTN-ETSU CIKMITAlS
TUSIIT~A
SIIJCON~
l.)This product is designed and built,
for
use under the normal environment.
It is
susceptible tokhe rad.iation.
2)AS ‘$j.s PrC$Ct is recomized
as the S t r a t e g i c
M a t e r i a l which is un&p control of
I& Iradc & LJWrt Law, an
export
khxmce
granted bi the govern-t j,s r&uj,ed
for exportation,
Microcontroller MCU
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