LMUN2133LT1 datasheet, PDF - EEWORLD Datasheet

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LMUN2133LT1: Descriptionbias resistor transistors; CategoryDiscrete semiconductor The transistor; File Size225KB，8 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LMUN2133LT1 Overview

bias resistor transistors

LMUN2133LT1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

LMUN2111LT1

SERIES

SOT-23

•

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

•

Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

MARKINGDIAGRAM

A6x M

A6x = Device Marking

= A – L(See Page 2)

= Date Code

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of this

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Symbol

Max

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

508 (Note 1.)

311 (Note 2.)

174 (Note 1.)

208 (Note 2.)

–55 to +150

Unit

°C/W

°C

data sheet.

θJA

θJL

, T

stg

LMUN2111-1/8

LMUN2133LT1 Related Products

	LMUN2133LT1	LMUN2131LT3	LMUN2134LT1	LMUN2130LT3	LMUN2130LT1	LMUN2132LT3	LMUN2132LT1	LMUN2131LT1	LMUN2134LT3	LMUN2133LT3
Description	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors	bias resistor transistors
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	80	8	80	3	3	15	15	8	80	80
Number of components	1	1	1	1	1	1	1	1	1	1
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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