T436416D-7C datasheet, PDF - EEWORLD Datasheet

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T436416D-7C: Description4M x 16 Sdram 1M x 16bit x 4banks synchronous dram; Categorystorage storage; File Size726KB，73 Pages; ManufacturerTM Technology, Inc.; Websitehttp://www.tmtech.com.tw/

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T436416D-7C Overview

4M x 16 Sdram 1M x 16bit x 4banks synchronous dram

T436416D-7C Parametric

Parameter Name	Attribute value
Maker	TM Technology, Inc.
package instruction	,
Reach Compliance Code	unknown

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•

T436416D

SDRAM

FEATURES

Fast access time from clock: 4.5/5/5.4 ns

Fast clock rate: 200/166/143 MHz

Fully synchronous operation

Internal pipelined architecture

1M word x 16-bit x 4-bank

Programmable Mode registers

- CAS# Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

•

Auto Refresh and Self Refresh

•

4096 refresh cycles/64ms

•

CKE power down mode

•

Single +3.3V

0.3V power supply

•

Interface: LVTTL

•

54-pin 400 mil plastic TSOP II package

•

60-Ball, 6.4 mm x 10.1 mm TFBGA package

4M x 16 SDRAM

1M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION

The T436416D SDRAM is a high-speed CMOS

synchronous DRAM containing 64 Mbits. It is internally

configured as 4 Banks of 1M word x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CLK). Read and write

accesses to the SDRAM are burst oriented; accesses

start at a selected location and continue for a

programmed number of locations in a programmed

sequence. Accesses begin with the registration of a

BankActivate command which is then followed by a

Read or Write command.

The T436416D provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy to

use.

By having a programmable mode register, the

system can choose the most suitable modes to maximize

its performance. These devices are well suited for

applications requiring high memory bandwidth and

particularly well suited to high performance PC

applications.

Key Specifications

T436416D

5/6/7

5/6/7 ns

4.5/5/5.4/ ns

35/42/45 ns

50/60/63 ns

CK3

AC3

RAS

Clock Cycle time(min.)

Access time from CLK(max.)

Row Active time(min.)

Row Cycle time(min.)

ORDERING INFORMATION

Part Number

T436416D-5S/-5C

T436416D-5SG/-5CG

T436416D-6S/-6C

T436416D-6SG/-6CG

T436416D-7S/-7C

Frequency

200MHz

166MHz

143MHz

Package

TSOP II / TFBGA

T436416D-7SG/-7CG 143MHz

S : indicates TSOPII Package,

C : indicates TFBGA Package,

G : indicates Pb Free Package

TM Technology Inc. reserves the right

P. 1

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

T436416D-7C Related Products

	T436416D-7C	T436416D-7SG	T436416D-7S
Description	4M x 16 Sdram 1M x 16bit x 4banks synchronous dram	4M x 16 Sdram 1M x 16bit x 4banks synchronous dram	4M x 16 Sdram 1M x 16bit x 4banks synchronous dram
Maker	TM Technology, Inc.	TM Technology, Inc.	TM Technology, Inc.
Reach Compliance Code	unknown	unknown	unknown

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