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BDV66A

Description
power transistors(16a,60-100v,125w)
CategoryDiscrete semiconductor    The transistor   
File Size102KB,3 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
Download Datasheet Parametric Compare View All

BDV66A Overview

power transistors(16a,60-100v,125w)

BDV66A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)16 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)175 W
surface mountNO
Base Number Matches1

BDV66A Related Products

BDV66A BDV67A BDV67 BDV66 BDV66B BDV67B
Description power transistors(16a,60-100v,125w) power transistors(16a,60-100v,125w) power transistors(16a,60-100v,125w) power transistors(16a,60-100v,125w) power transistors(16a,60-100v,125w) power transistors(16a,60-100v,125w)
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 16 A 16 A 16 A 16 A 16 A 16 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000 1000 1000 1000
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP NPN NPN PNP PNP NPN
Maximum power dissipation(Abs) 175 W 200 W 175 W 175 W 175 W 200 W
surface mount NO NO NO NO NO NO
Base Number Matches 1 1 1 1 1 1
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