BDV66 datasheet, PDF - EEWORLD Datasheet

BDV66: Descriptionpower transistors(16a,60-100v,125w); CategoryDiscrete semiconductor The transistor; File Size102KB，3 Pages; ManufacturerMOSPEC; Websitehttp://www.mospec.com.tw/eng/index.html

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BDV66 Overview

power transistors(16a,60-100v,125w)

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	16 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	175 W
surface mount	NO
Nominal transition frequency (fT)	7 MHz
Base Number Matches	1

	BDV66	BDV66A	BDV67A	BDV67	BDV66B	BDV67B
Description	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	16 A	16 A	16 A	16 A	16 A	16 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000	1000	1000	1000
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	NPN	NPN	PNP	NPN
Maximum power dissipation(Abs)	175 W	175 W	200 W	175 W	175 W	200 W
surface mount	NO	NO	NO	NO	NO	NO
Base Number Matches	1	1	1	1	1	1

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