BDV66B datasheet, PDF - EEWORLD Datasheet

BDV66B: Descriptionpower transistors(16a,60-100v,125w); CategoryDiscrete semiconductor The transistor; File Size102KB，3 Pages; ManufacturerMOSPEC; Websitehttp://www.mospec.com.tw/eng/index.html

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BDV66B Overview

power transistors(16a,60-100v,125w)

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	16 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	175 W
surface mount	NO
Base Number Matches	1

A

	BDV66B	BDV66A	BDV67A	BDV67	BDV66	BDV67B
Description	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)	power transistors(16a,60-100v,125w)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	16 A	16 A	16 A	16 A	16 A	16 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000	1000	1000	1000
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	NPN	NPN	PNP	NPN
Maximum power dissipation(Abs)	175 W	175 W	200 W	175 W	175 W	200 W
surface mount	NO	NO	NO	NO	NO	NO
Base Number Matches	1	1	1	1	1	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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