SKiiP 31 NAB 06
Absolute Maximum Ratings
Symbol
Inverter
V
CES
V
GES
I
C
I
CM
I
F
= –I
C
I
FM
= –I
CM
Conditions
1)
Values
600
± 20
50 / 35
100 / 70
57 / 38
114 / 76
800
25
370
680
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A
2
s
°C
°C
V
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 06
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
Bridge Rectifier
V
RRM
I
D
T
heatsink
= 80 °C
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
I
FSM
I
2
t
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
T
j
T
stg
V
isol
AC, 1 min.
Characteristics
Symbol
Conditions
1)
IGBT - Inverter
V
CEsat
I
C
= 50 A T
j
= 25 (125)
°C
V
CC
= 300 V; V
GE
= ± 15 V
t
d(on)
t
r
I
C
= 50 A; T
j
= 125
°C
R
gon
= R
goff
= 22
Ω
t
d(off)
t
f
inductive load
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
R
thjh
IGBT - Chopper *
V
CEsat
I
C
= 30 A T
j
= 25 (125)
°C
V
CC
= 300 V; V
GE
= ± 15 V
t
d(on)
t
r
I
C
= 30 A; T
j
= 125
°C
R
gon
= R
goff
= 33
Ω
t
d(off)
t
f
inductive load
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
R
thjh
Diode
2)
- Inverter & Chopper
V
F
= V
EC
I
F
= 50 A T
j
= 25 (125)
°C
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
I
F
= 50 A, V
R
= – 300 V
I
RRM
di
F
/dt = – 800 A/µs
Q
rr
E
off
V
GE
= 0 V, T
j
= 125 °C
per diode
R
thjh
Diode - Rectifier
V
F
I
F
= 25 A, T
j
= 25 °C
per diode
R
thjh
Temperature Sensor
R
TS
T = 25 / 100 °C
Mechanical Data
M
1
case to heatsink, SI Units
Case
mechanical outline see page
B 16 – 9
2
min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
max.
Units
V
2,1(2,2) 2,7(2,8)
ns
120
60
ns
160
80
ns
500
330
ns
830
550
mJ
–
7,3
nF
–
2,8
K/W
1,0
–
V
2,1(2,2) 2,7(2,8)
ns
100
50
ns
160
80
ns
370
250
ns
750
500
mJ
–
4,0
nF
–
1,6
K/W
1,4
–
V
1,45(1,4) 1,7(1,7)
V
0,9
0,85
mΩ
16
11
–
A
50
–
µC
5,0
–
mJ
1,5
1,2
K/W
–
1,2
–
1000 / 1670
–
M3
2,5
–
2,6
V
K/W
Ω
Nm
UL recognized file no. E63532
•
•
specification of temperature
sensor see part A
common characteristics see
page B16–3
Options
•
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
2)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06
© by SEMIKRON
0898
B 16 – 31
Fig. 1 Typ. output characteristic, t
p
= 80
µs;
25 °C
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
G
= 22
Ω
Fig. 2 Typ. output characteristic, t
p
= 80
µs;
125 °C
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 50 A
Fig. 3 Turn-on /-off energy = f (I
C
)
I
Cpuls
= 50 A
Fig. 4 Turn-on /-off energy = f (R
G
)
V
GE
= 0 V
f = 1 MHz
Fig. 5 Typ. gate charge characteristic
B 16 – 32
Fig. 6 Typ. capacitances vs. V
CE
0698
© by SEMIKRON
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC
1.2
Mini0607
T
j
= 150 °C
V
GE
=
≥
15 V
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Th [°C]
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
T
j
=
≤
150 °C
V
GE
= ± 15 V
T
j
=
≤
150 °C
V
GE
= ± 15 V
t
sc
=
≤
10
µs
L
ext
< 25 nH
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
© by SEMIKRON
Fig. 12 Forward characteristic of the input bridge diode
0698
B 16 – 3
MiniSKiiP 3
SKiiP 30 NAB 06
SKiiP 31 NAB 06
SKiiP 32 NAB 06
SKiiP 30 NAB 12
SKiiP 31 NAB 12
SKiiP 32 NAB 12
Circuit
Case M3
Layout and connections for the
customer’s printed circuit board
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