SKIIP32NAB06 datasheet, PDF - EEWORLD Datasheet

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SKIIP32NAB06: Description3-phase bridge rectifier + braking chopper + 3-phase bridge inverter; CategoryDiscrete semiconductor The transistor; File Size355KB，4 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKIIP32NAB06 Overview

3-phase bridge rectifier + braking chopper + 3-phase bridge inverter

SKIIP32NAB06 Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	FLANGE MOUNT, R-XUFM-X22
Contacts	22
Manufacturer packaging code	CASE M3
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	600 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X22
Number of components	7
Number of terminals	22
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	880 ns
Nominal on time (ton)	140 ns

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SKiiP 31 NAB 06

Absolute Maximum Ratings

Symbol

Inverter

CES

GES

= –I

Conditions

Values

600

± 20

50 / 35

100 / 70

57 / 38

114 / 76

800

370

680

– 40 . . . + 150

– 40 . . . + 125

2500

Units

°C

heatsink

= 25 / 80 °C

< 1 ms; T

heatsink

= 25 / 80 °C

heatsink

= 25 / 80 °C

< 1 ms; T

heatsink

= 25 / 80 °C

MiniSKiiP 3

SEMIKRON integrated

intelligent Power

SKiiP 31 NAB 06

3-phase bridge rectifier +

braking chopper +

3-phase bridge inverter

Case M3

Bridge Rectifier

RRM

heatsink

= 80 °C

= 10 ms; sin. 180 °, T

= 25 °C

FSM

= 10 ms; sin. 180 °, T

= 25 °C

stg

isol

AC, 1 min.

Characteristics

Symbol

Conditions

IGBT - Inverter

CEsat

= 50 A T

= 25 (125)

°C

= 300 V; V

= ± 15 V

d(on)

= 50 A; T

= 125

°C

gon

= R

goff

= 22

Ω

d(off)

inductive load

+ E

off

ies

= 25 V; V

= 0 V, 1 MHz

per IGBT

thjh

IGBT - Chopper *

CEsat

= 30 A T

= 25 (125)

°C

= 300 V; V

= ± 15 V

d(on)

= 30 A; T

= 125

°C

gon

= R

goff

= 33

Ω

d(off)

inductive load

+ E

off

ies

= 25 V; V

= 0 V, 1 MHz

per IGBT

thjh

Diode

- Inverter & Chopper

= V

= 50 A T

= 25 (125)

°C

= 125 °C

= 50 A, V

= – 300 V

RRM

/dt = – 800 A/µs

off

= 0 V, T

= 125 °C

per diode

thjh

Diode - Rectifier

= 25 A, T

= 25 °C

per diode

thjh

Temperature Sensor

T = 25 / 100 °C

Mechanical Data

case to heatsink, SI Units

Case

mechanical outline see page

B 16 – 9

min.

–

typ.

max.

Units

2,1(2,2) 2,7(2,8)

120

160

500

330

830

550

–

7,3

–

2,8

K/W

1,0

–

2,1(2,2) 2,7(2,8)

100

160

370

250

750

500

–

4,0

–

1,6

K/W

1,4

–

1,45(1,4) 1,7(1,7)

0,9

0,85

mΩ

–

µC

5,0

–

1,5

1,2

K/W

–

1,2

–

1000 / 1670

–

2,5

–

2,6

K/W

Ω

UL recognized file no. E63532

•

specification of temperature

sensor see part A

common characteristics see

page B16–3

Options

•

also available with faster IGBTs

(type ... 063), data sheet on

request

heatsink

= 25 °C, unless

otherwise specified

CAL = Controlled Axial Lifetime

Technology (soft and fast

recovery)

* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06

0898

B 16 – 31

SKIIP32NAB06 Related Products

	SKIIP32NAB06	SKIIP30NAB12	SKIIP31NAB06	SKIIP32NAB12
Description	3-phase bridge rectifier + braking chopper + 3-phase bridge inverter	3-phase bridge rectifier + braking chopper + 3-phase bridge inverter	3-phase bridge rectifier + braking chopper + 3-phase bridge inverter	3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Maker	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON
package instruction	FLANGE MOUNT, R-XUFM-X22	SPECIAL SHAPE, R-XXSS-X22	SPECIAL SHAPE, R-XXSS-X22	FLANGE MOUNT, R-XUFM-X22
Contacts	22	22	22	22
Manufacturer packaging code	CASE M3	CASE M3	CASE M3	CASE M3
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	75 A	33 A	50 A	65 A
Collector-emitter maximum voltage	600 V	1200 V	600 V	1200 V
Configuration	COMPLEX	COMPLEX	COMPLEX	COMPLEX
JESD-30 code	R-XUFM-X22	R-XXSS-X22	R-XXSS-X22	R-XUFM-X22
Number of components	7	7	7	7
Number of terminals	22	22	22	22
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SPECIAL SHAPE	SPECIAL SHAPE	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UNSPECIFIED	UNSPECIFIED	UPPER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	880 ns	470 ns	880 ns	450 ns
Nominal on time (ton)	140 ns	140 ns	140 ns	100 ns
Gate-emitter maximum voltage	-	20 V	20 V	20 V
Maximum operating temperature	-	150 °C	150 °C	150 °C
VCEsat-Max	-	3 V	2.7 V	3 V

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