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SKIIP32NAB12

Description
3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
CategoryDiscrete semiconductor    The transistor   
File Size355KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SKIIP32NAB12 Overview

3-phase bridge rectifier + braking chopper + 3-phase bridge inverter

SKIIP32NAB12 Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instructionFLANGE MOUNT, R-XUFM-X22
Contacts22
Manufacturer packaging codeCASE M3
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum collector current (IC)65 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X22
Number of components7
Number of terminals22
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)450 ns
Nominal on time (ton)100 ns
VCEsat-Max3 V
SKiiP 31 NAB 06
Absolute Maximum Ratings
Symbol
Inverter
V
CES
V
GES
I
C
I
CM
I
F
= –I
C
I
FM
= –I
CM
Conditions
1)
Values
600
± 20
50 / 35
100 / 70
57 / 38
114 / 76
800
25
370
680
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A
2
s
°C
°C
V
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
MiniSKiiP 3
SEMIKRON integrated
intelligent Power
SKiiP 31 NAB 06
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
Bridge Rectifier
V
RRM
I
D
T
heatsink
= 80 °C
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
I
FSM
I
2
t
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
T
j
T
stg
V
isol
AC, 1 min.
Characteristics
Symbol
Conditions
1)
IGBT - Inverter
V
CEsat
I
C
= 50 A T
j
= 25 (125)
°C
V
CC
= 300 V; V
GE
= ± 15 V
t
d(on)
t
r
I
C
= 50 A; T
j
= 125
°C
R
gon
= R
goff
= 22
t
d(off)
t
f
inductive load
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
R
thjh
IGBT - Chopper *
V
CEsat
I
C
= 30 A T
j
= 25 (125)
°C
V
CC
= 300 V; V
GE
= ± 15 V
t
d(on)
t
r
I
C
= 30 A; T
j
= 125
°C
R
gon
= R
goff
= 33
t
d(off)
t
f
inductive load
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
R
thjh
Diode
2)
- Inverter & Chopper
V
F
= V
EC
I
F
= 50 A T
j
= 25 (125)
°C
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
I
F
= 50 A, V
R
= – 300 V
I
RRM
di
F
/dt = – 800 A/µs
Q
rr
E
off
V
GE
= 0 V, T
j
= 125 °C
per diode
R
thjh
Diode - Rectifier
V
F
I
F
= 25 A, T
j
= 25 °C
per diode
R
thjh
Temperature Sensor
R
TS
T = 25 / 100 °C
Mechanical Data
M
1
case to heatsink, SI Units
Case
mechanical outline see page
B 16 – 9
2
min.
typ.
max.
Units
V
2,1(2,2) 2,7(2,8)
ns
120
60
ns
160
80
ns
500
330
ns
830
550
mJ
7,3
nF
2,8
K/W
1,0
V
2,1(2,2) 2,7(2,8)
ns
100
50
ns
160
80
ns
370
250
ns
750
500
mJ
4,0
nF
1,6
K/W
1,4
V
1,45(1,4) 1,7(1,7)
V
0,9
0,85
mΩ
16
11
A
50
µC
5,0
mJ
1,5
1,2
K/W
1,2
1000 / 1670
M3
2,5
2,6
V
K/W
Nm
UL recognized file no. E63532
specification of temperature
sensor see part A
common characteristics see
page B16–3
Options
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
2)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06
© by SEMIKRON
0898
B 16 – 31

SKIIP32NAB12 Related Products

SKIIP32NAB12 SKIIP30NAB12 SKIIP31NAB06 SKIIP32NAB06
Description 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Maker SEMIKRON SEMIKRON SEMIKRON SEMIKRON
package instruction FLANGE MOUNT, R-XUFM-X22 SPECIAL SHAPE, R-XXSS-X22 SPECIAL SHAPE, R-XXSS-X22 FLANGE MOUNT, R-XUFM-X22
Contacts 22 22 22 22
Manufacturer packaging code CASE M3 CASE M3 CASE M3 CASE M3
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 65 A 33 A 50 A 75 A
Collector-emitter maximum voltage 1200 V 1200 V 600 V 600 V
Configuration COMPLEX COMPLEX COMPLEX COMPLEX
JESD-30 code R-XUFM-X22 R-XXSS-X22 R-XXSS-X22 R-XUFM-X22
Number of components 7 7 7 7
Number of terminals 22 22 22 22
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SPECIAL SHAPE SPECIAL SHAPE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UNSPECIFIED UNSPECIFIED UPPER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal off time (toff) 450 ns 470 ns 880 ns 880 ns
Nominal on time (ton) 100 ns 140 ns 140 ns 140 ns
Gate-emitter maximum voltage 20 V 20 V 20 V -
Maximum operating temperature 150 °C 150 °C 150 °C -
VCEsat-Max 3 V 3 V 2.7 V -
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