T431616A-7SI datasheet, PDF - EEWORLD Datasheet

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T431616A-7SI: Description1M x 16 sdram; File Size2MB，31 Pages; ManufacturerTM Technology, Inc.; Websitehttp://www.tmtech.com.tw/

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T431616A-7SI Overview

1M x 16 sdram

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•

T431616A

SDRAM

FEATURES

3.3V power supply

Clock cycle time : 6 / 7 / 8 / 10 ns

Dual banks operation

LVTTL compatible with multiplexed address

All inputs are sampled at the positive going

edge of system clock

•

Burst Read Single-bit Write operation

•

DQM for masking

•

Auto refresh and self refresh

•

32ms refresh period (2K cycle)

•

MRS cycle with address key programs

- CAS Latency ( 2 & 3 )

- Burst Length ( 1 , 2 , 4 , 8 & full page)

- Burst Type (Sequential & Interleave)

•

Available package type in 50 pin TSOP(II)

and 60-pin CSP.

•

Operating temperature :

- -5 ~ +70

°C

-40 ~ +85

°C

1M x 16 SDRAM

512K x 16bit x 2Banks Synchronous DRAM

GRNERAL DESCRIPTION

The T431616A is 16,777,216 bits synchronous

high data rate Dynamic RAM organized as

2 x 524,288 words by 16 bits , fabricated with high

performance CMOS technology . Synchronous

design allows precise cycle control with the use of

system clock I/O transactions are possible on every

clock cycle . Range of operating frequencies ,

programmable burst length and programmable

latencies allow the same device to be useful for a

variety of high bandwidth , high performance

memory system applications.

PART NUMBER EXAMPLES

PART NO.

CLOCK

CYCLE TIME

7ns

MAX

FREQUENCY

PACKAGE

TSOP-II

CSP

TSOP-II

CSP

OPERATING

TEMPERATURE

T431616A-7S

T431616A-7C

T431616A-7SI

T431616A-7CI

143 MHz

-5 ~ +70

°C

-5 ~ +70

°C

-40 ~ +85

°C

-40 ~ +85

°C

Taiwan Memory Technology, Inc. reserves the right

P. 1

to change products or specifications without notice.

Publication Date: DEC. 2000

Revision: C

T431616A-7SI Related Products

	T431616A-7SI	T431616A-7CI	T431616A-7C	T431616A	T431616A-7S
Description	1M x 16 sdram	Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, BGA-60	Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, BGA-60	1M x 16 sdram	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, TSOP2-50
Objectid	-	1154958720	1154958721	-	1154958724
package instruction	-	VFBGA, BGA60,7X15,25	VFBGA, BGA60,7X15,25	-	TSOP2, TSOP50,.46,32
Reach Compliance Code	-	unknown	unknown	-	unknown
ECCN code	-	EAR99	EAR99	-	EAR99
access mode	-	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	-	DUAL BANK PAGE BURST
Maximum access time	-	6 ns	6 ns	-	6 ns
Other features	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	143 MHz	143 MHz	-	143 MHz
I/O type	-	COMMON	COMMON	-	COMMON
interleaved burst length	-	1,2,4,8	1,2,4,8	-	1,2,4,8
JESD-30 code	-	R-PBGA-B60	R-PBGA-B60	-	R-PDSO-G50
length	-	10.1 mm	10.1 mm	-	20.95 mm
memory density	-	16777216 bit	16777216 bit	-	16777216 bit
Memory IC Type	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM
memory width	-	16	16	-	16
Number of functions	-	1	1	-	1
Number of ports	-	1	1	-	1
Number of terminals	-	60	60	-	50
word count	-	1048576 words	1048576 words	-	1048576 words
character code	-	1000000	1000000	-	1000000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	-	85 °C	70 °C	-	70 °C
Minimum operating temperature	-	-40 °C	-5 °C	-	-5 °C
organize	-	1MX16	1MX16	-	1MX16
Output characteristics	-	3-STATE	3-STATE	-	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	-	VFBGA	VFBGA	-	TSOP2
Encapsulate equivalent code	-	BGA60,7X15,25	BGA60,7X15,25	-	TSOP50,.46,32
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	-	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	-	SMALL OUTLINE, THIN PROFILE
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified
refresh cycle	-	2048	2048	-	2048
Maximum seat height	-	1 mm	1 mm	-	1.2 mm
self refresh	-	YES	YES	-	YES
Continuous burst length	-	1,2,4,8,FP	1,2,4,8,FP	-	1,2,4,8,FP
Maximum standby current	-	0.002 A	0.002 A	-	0.002 A
Maximum slew rate	-	0.17 mA	0.17 mA	-	0.17 mA
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	-	3 V	3 V	-	3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	-	3.3 V
surface mount	-	YES	YES	-	YES
technology	-	CMOS	CMOS	-	CMOS
Temperature level	-	INDUSTRIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	-	BALL	BALL	-	GULL WING
Terminal pitch	-	0.65 mm	0.65 mm	-	0.8 mm
Terminal location	-	BOTTOM	BOTTOM	-	DUAL
width	-	6.4 mm	6.4 mm	-	10.16 mm

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