DSF8045SK
DSF8045SK
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4150-5.6
DS4146-6.0 January 2000
APPLICATIONS
s
Snubber Diode For GTO Applications
KEY PARAMETERS
V
RRM
4500V
I
F(AV)
430A
I
FSM
3500A
Q
r
440
µ
C
t
rr
3.07
µ
s
FEATURES
s
Double side cooling
s
High surge capability
s
Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DSF8045SK45
4500
DSF8045SK44
4400
DSF8045SK43
4300
DSF8045SK42
4200
DSF8045SK41
4100
DSF8045SK40
4000
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: K.
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
430
680
600
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
285
445
380
A
A
A
1/9
DSF8045SK
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
3.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
61.25 x 10
3
2.8
39.2 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 8.0kN
with mounting compound
Forward (conducting)
Double side
Single side
-
-
-
-
-55
7.0
0.103
0.01
0.02
150
175
9.0
o
Min.
dc
Anode dc
-
-
Max.
0.048
0.09
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
2/9
DSF8045SK
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
-
-
-
-
Max.
4.0
50
3.07
440
240
-
1.7
2.1
300
Units
V
mA
µs
µC
A
-
V
mΩ
V
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
3/9
DSF8045SK
CURVES
2500
Measured under pulse conditions
Instantaneous forward current I
F
- (A)
2000
T
j
= 25˚C
1500
T
j
= 150˚C
1000
500
2.0
3.0
4.0
5.0
6.0
Instantaneous forward voltage V
F
- (V)
Fig.1 Maximum (limit) forward characteristics
500
Measured under pulse conditions
400
Instantaneous forward current I
F
- (A)
300
T
j
= 150˚C
200
T
j
= 25˚C
100
0
1.5
2.0
2.5
3.0
3.5
Instantaneous forward voltage V
F
- (V)
Fig.2 Maximum (limit) forward characteristics
4/9
DSF8045SK
600
Current
waveform
V
FR
500
δy
δx
400
Voltage
waveform
di =
δy
dt
δx
Transient forward votage V
FP
- (V)
300
T
j
= 125˚C limit
T
j
= 25˚C limit
200
100
0
0
500
1000
1500
2000
Rate of rise of forward current dI
F
/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
5/9
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