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DSF8045SK43

Description
600 A, 4300 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size47KB,9 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance
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DSF8045SK43 Overview

600 A, 4300 V, SILICON, RECTIFIER DIODE

DSF8045SK43 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDynex
Objectid1936482783
package instructionO-CEDB-N2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
compound_id6128141
Other featuresSNUBBER DIODE
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)4 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current3500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current430 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4300 V
Maximum reverse recovery time3.07 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
DSF8045SK
DSF8045SK
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4150-5.6
DS4146-6.0 January 2000
APPLICATIONS
s
Snubber Diode For GTO Applications
KEY PARAMETERS
V
RRM
4500V
I
F(AV)
430A
I
FSM
3500A
Q
r
440
µ
C
t
rr
3.07
µ
s
FEATURES
s
Double side cooling
s
High surge capability
s
Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Conditions
DSF8045SK45
4500
DSF8045SK44
4400
DSF8045SK43
4300
DSF8045SK42
4200
DSF8045SK41
4100
DSF8045SK40
4000
Lower voltage grades available.
V
RSM
= V
RRM
+ 100V
Outline type code: K.
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
430
680
600
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
285
445
380
A
A
A
1/9

DSF8045SK43 Related Products

DSF8045SK43 DSF8045SK DSF8045SK41 DSF8045SK45 DSF8045SK40 DSF8045SK42 DSF8045SK44
Description 600 A, 4300 V, SILICON, RECTIFIER DIODE 600 A, 4100 V, SILICON, RECTIFIER DIODE 600 A, 4100 V, SILICON, RECTIFIER DIODE 600 A, 4500 V, SILICON, RECTIFIER DIODE 600 A, 4000 V, SILICON, RECTIFIER DIODE 600 A, 4200 V, SILICON, RECTIFIER DIODE 600 A, 4400 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free Lead free
Maker Dynex - Dynex Dynex Dynex Dynex Dynex
Contacts 2 - 2 2 2 2 2
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
ECCN code EAR99 - EAR99 - EAR99 - EAR99
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 4 V - 4 V 4 V 4 V 4 V 4 V
Maximum non-repetitive peak forward current 3500 A - 3500 A 3500 A 3500 A 3500 A 3500 A
Number of components 1 - 1 1 1 1 1
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 430 A - 430 A 285 A 430 A 285 A 285 A
Maximum repetitive peak reverse voltage 4300 V - 4100 V 4500 V 4000 V 4200 V 4400 V
Maximum reverse recovery time 3.07 µs - 3.07 µs 3.1 µs 3.07 µs 3.1 µs 3.1 µs
surface mount YES - YES NO YES NO NO
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