MPSA06 datasheet, PDF - EEWORLD Datasheet

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MPSA06: Descriptionepitaxial planar npn transistor (driver stage amplifier, voltage amplifier); CategoryDiscrete semiconductor The transistor; File Size56KB，1 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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MPSA06 Overview

epitaxial planar npn transistor (driver stage amplifier, voltage amplifier)

MPSA06 Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.625 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

DRIVER STAGE AMPLIFIER APPLICATIONS.

VOLTAGE AMPLIFIER APPLICATIONS.

MPSA06

EPITAXIAL PLANAR NPN TRANSISTOR

Complementary to MPSA56.

FEATURES

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

)

SYMBOL

CBO

CEO

EBO

stg

RATING

500

-500

625

150

-55

150

UNIT

DIM

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

SYMBOL

CBO

CEO

(BR)CEO

(1)

(2)

CE(sat)

TEST CONDITION

=80V, I

=60V, I

=1mA, I

=1V, I

=10mA

=1V, I

=100mA

=100mA, I

=10mA

=1V, I

=100mA

=2V, I

=10mA

MIN.

100

TYP.

MAX.

100

0.25

1.2

MHz

UNIT

1999. 11. 30

Revision No : 3

1/1

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