TIP120/121/122
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP120
: TIP121
: TIP122
Value
60
80
100
60
80
100
5
5
8
120
2
65
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
mA
W
W
°C
°C
R1
R2
E
Equivalent Circuit
C
B
V
CEO
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
R1
≅
8k
Ω
R
2
≅
0.12
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
I
CBO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Output Capacitance
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 3V,I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 3V, I
C
= 3A
V
CB
= 10V, I
E
= 0, f = 0.1MHz
1000
1000
2.0
4.0
2.5
200
V
V
V
pF
0.2
0.2
0.2
2
mA
mA
mA
mA
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
0.5
0.5
0.5
mA
mA
mA
Test Condition
I
C
= 100mA, I
B
= 0
Min.
60
80
100
Max.
Units
V
V
V
I
CEO
* Pulse Test : PW≤300µs, Duty cycle
≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TIP120/121/122
Typical characteristics
10000
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 4V
3.5
I
C
= 250I
B
3.0
h
FE
, DC CURRENT GAIN
2.5
1000
2.0
1.5
V
BE
(sat)
1.0
V
CE
(sat)
0.5
0.1
100
0.1
1
10
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
f=0.1MHz
s
0u
10 us
0
50
C
ob
[pF] C
ib
[pF], CAPACITANCE
s
1m
I
C
[A], COLLECTOR CURRENT
s
5m
C
D
1
100
C
ob
C
ib
0.1
TIP120
TIP121
TIP122
10
0.1
1
10
100
0.01
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
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or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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