TLP321,TLP321-2,TLP321-4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP321, TLP321-2, TLP321-4
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA TLP321,
−2
and
−4
consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP321−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP321−4 provides four isolated channels in a
sixteen plastic DIP package.
TLP321 /
−2
/
−4
have high V
CEO
voltage (V
CEO
= 80V).
·
·
·
·
Collector−emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB:
100%
(min.)
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.26g
11−5B2
Unit in mm
Pin Configurations
(top view)
TLP321
1
2
4
3
1
2
3
4
TLP321-2
8
7
6
1
2
3
TLP321-4
16
15
14
13
12
11
10
9
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
TOSHIBA
Weight: 0.54g
11−10C4
5
4
5
6
7
8
1,3 : ANODE
2,4 : CATHODE
5,7 : EMITTER
6,8 : COLLECTOR
1,3,5,7
: ANODE
2,4,6,8
: CATHODE
9,11,13,15 : EMITTER
10,12,14,16 : COLLECTOR
TOSHIBA
Weight: 1.1g
11−20A3
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2002-09-25
TLP321,TLP321-2,TLP321-4
Current Transfer Ratio
Current Transfer Ratio (%)
(I
C
/ I
F
)
Type
Classification
*1
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min.
(None)
Rank Y
TLP321
Rank GR
Rank BL
Rank GB
TLP321-2
TLP321-4
(None)
Rank GB
50
50
100
200
100
50
100
Max.
600
150
300
600
600
600
600
BLANK, Y, Y
■
, G, G
■
, B, B
■
, GB
Y, Y
■
G, G
■
B, B
■
G, G
■
, B, B
■
, GB
BLANK, GR, BL, GB
GR, BL, GB
Marking Of Classification
*1: Ex. Rank GB: TLP321 (GB)
(Note)
Application type name for certification test, please use standard product type name, i. e.
TLP321 (GB): TLP321
TLP321-2 (GB): TLP321-2
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TLP321,TLP321-2,TLP321-4
Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Symbol
TLP321-1
Forward current
Forward current derating
LED
Pulse forward current
Reverse voltage
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation
derating (1 Circuit, Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta
≥
25°C)
Isolation voltage
(Note 1)
I
F
∆I
F
/ °C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/ °C
T
j
T
stg
T
opr
T
sol
R
T
∆P
T
/ °C
BV
S
250
-2.5
150
-1.5
125
-55~125
-55~100
260 (10s)
150
-1.5
60
-0.7
(Ta
≥
39°C)
TLP321-2
TLP321-4
50
-0.5
(Ta
≥
25°C)
Unit
mA
mA / °C
A
V
°C
V
V
mA
1 (100µs pulse, 100pps)
5
125
80
7
50
100
-1.0
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
5000 (AC, 1min., RH
≤
60%)
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins
shorted together.
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2002-09-25
TLP321,TLP321-2,TLP321-4
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
―
―
―
-25
Typ.
12
16
1
―
Max.
48
20
10
85
Unit
V
mA
mA
°C
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Detector
Emitter-collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
I
F
=10 mA
V
R
=5 V
V = 0, f = 1MHz
I
C
= 0.5mA
I
E
= 0.1mA
V
CE
= 48V
V
CE
= 48V, Ta = 85°C
V = 0, f = 1MHz
Condition
Min.
1.0
—
—
80
7
—
—
—
Typ.
1.15
—
30
—
—
10
2
10
Max.
1.3
10
—
—
—
100
50
—
Unit
V
µA
pF
V
V
nA
µA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Condition
I
F
= 5mA, V
CE
= 5V
Rank GB
I
F
= 1mA, V
CE
= 0.4V
Rank GB
I
C
= 2.4mA, I
F
= 8mA
Collector-emitter
saturation voltage
V
CE (sat)
I
C
= 0.2mA, I
F
= 1mA
Rank GB
MIn.
50
100
—
30
—
—
—
Typ.
—
—
60
—
—
0.2
—
Max.
600
600
—
—
0.4
—
0.4
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
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2002-09-25
TLP321,TLP321-2,TLP321-4
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1MHz
V
S
= 500V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
—
5×10
10
5000
—
—
Typ.
0.8
10
14
—
10000
10000
Max.
—
—
—
—
—
Unit
pF
Ω
Vrms
Vdc
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9kΩ (Fig.1)
V
CC
= 5V, I
F
= 16mA
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
Test Condition
Min.
—
—
—
—
—
—
—
Typ.
2
3
3
3
2
15
25
Max.
—
—
—
—
—
—
—
µs
µs
Unit
Fig. 1 Switching time test circuit
R
L
V
CC
V
CE
I
F
t
S
V
CE
V
CC
4.5V
0.5V
t
ON
t
OFF
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2002-09-25
FPGA/CPLD
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