TLP321-4 datasheet, PDF - EEWORLD Datasheet

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TLP321-4: DescriptionTOSHIBA Photocoupler GaAs Ired & Photo−Transistor; CategoryLED optoelectronic/LED photoelectric; File Size217KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TLP321-4 Overview

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP321-4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	PLASTIC, DIP-16
Reach Compliance Code	unknow
Other features	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Mi	80 V
Configuration	SEPARATE, 4 CHANNELS
Nominal current transfer ratio	50%
Maximum dark power	100 nA
Maximum forward current	0.05 A
Maximum insulation voltage	5000 V
JESD-609 code	e0
Number of components	4
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
Optoelectronic device types	TRANSISTOR OUTPUT OPTOCOUPLER
Terminal surface	Tin/Lead (Sn/Pb)

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TLP321,TLP321-2,TLP321-4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP321, TLP321-2, TLP321-4

Programmable Controllers

DC−Output Module

Telecommunication

The TOSHIBA TLP321,

−2

and

−4

consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode.

The TLP321−2 offers two isolated channels in an eight lead plastic DIP

package, while the TLP321−4 provides four isolated channels in a

sixteen plastic DIP package.

TLP321 /

−2

−4

have high V

CEO

voltage (V

CEO

= 80V).

Collector−emitter voltage: 80V (min.)

Current transfer ratio: 50% (min.)

Rank GB:

100%

(min.)

Isolation voltage: 5000Vrms (min.)

UL recognized: UL1577, file no. E67349

TOSHIBA

Weight: 0.26g

11−5B2

Unit in mm

Pin Configurations

(top view)

TLP321

TLP321-2

TLP321-4

1 : ANODE

2 : CATHODE

3 : EMITTER

4 : COLLECTOR

TOSHIBA

Weight: 0.54g

11−10C4

1,3 : ANODE

2,4 : CATHODE

5,7 : EMITTER

6,8 : COLLECTOR

1,3,5,7

: ANODE

2,4,6,8

: CATHODE

9,11,13,15 : EMITTER

10,12,14,16 : COLLECTOR

TOSHIBA

Weight: 1.1g

11−20A3

2002-09-25

TLP321-4 Related Products

	TLP321-4	TLP321	TLP321-2
Description	TOSHIBA Photocoupler GaAs Ired & Photo−Transistor	TOSHIBA Photocoupler GaAs Ired & Photo−Transistor	TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	PLASTIC, DIP-16	PLASTIC, 11-5B2, DIP-4	PLASTIC, DIP-8
Reach Compliance Code	unknow	unknow	unknow
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Mi	80 V	80 V	80 V
Configuration	SEPARATE, 4 CHANNELS	SINGLE	SEPARATE, 2 CHANNELS
Nominal current transfer ratio	50%	50%	50%
Maximum dark power	100 nA	100 nA	100 nA
Maximum forward current	0.05 A	0.06 A	0.05 A
Maximum insulation voltage	5000 V	5000 V	5000 V
JESD-609 code	e0	e0	e0
Number of components	4	1	2
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C
Optoelectronic device types	TRANSISTOR OUTPUT OPTOCOUPLER	TRANSISTOR OUTPUT OPTOCOUPLER	TRANSISTOR OUTPUT OPTOCOUPLER
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)

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