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TLP321-2

Description
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
CategoryLED optoelectronic/LED    photoelectric   
File Size217KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

TLP321-2 Overview

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP321-2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionPLASTIC, DIP-8
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Coll-Emtr Bkdn Voltage-Mi80 V
ConfigurationSEPARATE, 2 CHANNELS
Nominal current transfer ratio50%
Maximum dark power100 nA
Maximum forward current0.05 A
Maximum insulation voltage5000 V
JESD-609 codee0
Number of components2
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
Terminal surfaceTin/Lead (Sn/Pb)
TLP321,TLP321-2,TLP321-4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP321, TLP321-2, TLP321-4
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA TLP321,
−2
and
−4
consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP321−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP321−4 provides four isolated channels in a
sixteen plastic DIP package.
TLP321 /
−2
/
−4
have high V
CEO
voltage (V
CEO
= 80V).
·
·
·
·
Collector−emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB:
100%
(min.)
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.26g
11−5B2
Unit in mm
Pin Configurations
(top view)
TLP321
1
2
4
3
1
2
3
4
TLP321-2
8
7
6
1
2
3
TLP321-4
16
15
14
13
12
11
10
9
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
TOSHIBA
Weight: 0.54g
11−10C4
5
4
5
6
7
8
1,3 : ANODE
2,4 : CATHODE
5,7 : EMITTER
6,8 : COLLECTOR
1,3,5,7
: ANODE
2,4,6,8
: CATHODE
9,11,13,15 : EMITTER
10,12,14,16 : COLLECTOR
TOSHIBA
Weight: 1.1g
11−20A3
1
2002-09-25

TLP321-2 Related Products

TLP321-2 TLP321 TLP321-4
Description TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
Is it Rohs certified? incompatible incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction PLASTIC, DIP-8 PLASTIC, 11-5B2, DIP-4 PLASTIC, DIP-16
Reach Compliance Code unknow unknow unknow
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Mi 80 V 80 V 80 V
Configuration SEPARATE, 2 CHANNELS SINGLE SEPARATE, 4 CHANNELS
Nominal current transfer ratio 50% 50% 50%
Maximum dark power 100 nA 100 nA 100 nA
Maximum forward current 0.05 A 0.06 A 0.05 A
Maximum insulation voltage 5000 V 5000 V 5000 V
JESD-609 code e0 e0 e0
Number of components 2 1 4
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C
Optoelectronic device types TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb)
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