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P4KE8.2

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size158KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

P4KE8.2 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE8.2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-15
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage9.02 V
Minimum breakdown voltage7.38 V
Breakdown voltage nominal value8.2 V
Shell connectionISOLATED
Maximum clamping voltage12.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AC
JESD-30 codeO-PALF-W2
JESD-609 codee2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6.6 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P4 KE6,8...P4 KE170CA
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Axial lead diode
Unidirectional and
bidirectional Transient
Voltage Suppressor
diodes
P4 KE6,8...P4 KE170CA
Pulse Power
Dissipation: 400 W
Maximum Stand-off
voltage: 5,5 ... 145 V
Features
Mechanical Data
1)
2)
3)
1
02-04-2004 SCT
© by SEMIKRON
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